W3MS40N009V

W3MS40N009V is a low voltage N-channel MOSFET in PDFN5*6 package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

W3MS40N009V is a low voltage N-channel MOSFET in PDFN5*6 package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

Parametric

  • Package Name

    PDFN5X6

  • Product Status

    New Product

  • Polarity

    N

  • VDS(V)

    40

  • Vthtyp(V)

    3

  • ID(A) @ 25℃

    330

  • RDS (on) @10V max (mΩ)

    0.9

  • RDS (on) @4.5V max (mΩ)

    -

  • QG @10V typ(nC)

    77

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
W3MS40N009V 9340 748 94118 W3MS40N009VJ PDFN5X6 REEL 13\" Q1/T1 New Product RoHS compliant, Pb-Free lead plating, RHF H NA MSL3 Chemical-W3MS40N009V W3MS40N009V_rohs

Relevant documents

  • Documentation

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