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650V Discrete IGBTs

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Show 59 products

  • Package
    • IITO247
    • TO220
    • TO220F
    • TO247
    • TO247-4L
    • TO263
    • TO3PF
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  • Technology
    • Trench Field-stop
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  • Build-in Diode
    • No
    • Yes
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  • Voltage class(V)
    • 650
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  • Ic @100℃(A)
    • 15
    • 17
    • 22
    • 30
    • 40
    • 50
    • 60
    • 75
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  • PD @25℃(W)
    • 66
    • 67
    • 78
    • 94
    • 125
    • 150
    • 278
    • 312
    • 375
    • 378
    • 454
    • 600
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  • VGE(V)
    • ±20
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  • VGEth(V)
    • 4.2
    • 4.3
    • 4.5
    • 4.8
    • 5
    • 5.1
    • 5.2
    • 5.3
    • 5.4
    • 5.5
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  • VCE(sat)@25℃ Typ.(V)
    • 1.25
    • 1.3
    • 1.35
    • 1.4
    • 1.45
    • 1.5
    • 1.55
    • 1.6
    • 1.65
    • 1.7
    • 1.75
    • 1.85
    • 1.9
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  • VCE(sat)@175℃(V)
    • 1.5
    • 1.65
    • 1.75
    • 1.8
    • 1.85
    • 1.9
    • 1.95
    • 2
    • 2.05
    • 2.1
    • 2.3
    • 2.35
    • 2.4
    • 2.5
    • 2.6
    • 2.7
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  • Eoff @25℃(mJ)
    • 0.25
    • 0.3
    • 0.33
    • 0.35
    • 0.38
    • 0.45
    • 0.5
    • 0.6
    • 0.65
    • 0.7
    • 0.72
    • 0.75
    • 0.9
    • 1
    • 1.05
    • 1.12
    • 1.2
    • 1.24
    • 1.25
    • 1.4
    • 1.65
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  • Eoff @175℃(mJ)
    • 0.4
    • 0.45
    • 0.49
    • 0.6
    • 0.65
    • 0.7
    • 0.8
    • 0.85
    • 1
    • 1.05
    • 1.25
    • 1.35
    • 1.5
    • 1.55
    • 1.56
    • 1.6
    • 1.65
    • 1.69
    • 1.85
    • 2.2
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  • VF @25℃(V)
    • -
    • 1.67
    • 1.7
    • 1.75
    • 1.85
    • 1.9
    • 1.95
    • 2
    • 2.05
    • 2.1
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  • VF @175℃(V)
    • -
    • 1.37
    • 1.45
    • 1.5
    • 1.55
    • 1.6
    • 1.65
    • 1.73
    • 1.75
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  • Qrr @25℃(nC)
    • -
    • 148
    • 166
    • 221
    • 300
    • 321
    • 336
    • 435
    • 454
    • 456
    • 570
    • 592
    • 617
    • 871
    • 910
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  • Qrr @175℃(nC)
    • -
    • 500
    • 508
    • 990
    • 1193
    • 1265
    • 1318
    • 1622
    • 1642
    • 1662
    • 1751
    • 1942
    • 2232
    • 2527
    • 2994
    • 3600
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  • SCWT(uS)
    • 5
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  • Tj(max)(℃)
    • 175
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  • Qualification
    • Industrial
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  • Type Name
  • Compare
    Show All
  • Package
    • IITO247
    • TO220
    • TO220F
    • TO247
    • TO247-4L
    • TO263
    • TO3PF

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  • Technology
    • Trench Field-stop

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  • Build-in Diode
    • No
    • Yes

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  • Voltage class(V)
    • 650

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  • Ic @100℃(A)
    • 15
    • 17
    • 22
    • 30
    • 40
    • 50
    • 60
    • 75

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  • PD @25℃(W)
    • 66
    • 67
    • 78
    • 94
    • 125
    • 150
    • 278
    • 312
    • 375
    • 378
    • 454
    • 600

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  • VGE(V)
    • ±20

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  • VGEth(V)
    • 4.2
    • 4.3
    • 4.5
    • 4.8
    • 5
    • 5.1
    • 5.2
    • 5.3
    • 5.4
    • 5.5

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  • VCE(sat)@25℃ Typ.(V)
    • 1.25
    • 1.3
    • 1.35
    • 1.4
    • 1.45
    • 1.5
    • 1.55
    • 1.6
    • 1.65
    • 1.7
    • 1.75
    • 1.85
    • 1.9

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  • VCE(sat)@175℃(V)
    • 1.5
    • 1.65
    • 1.75
    • 1.8
    • 1.85
    • 1.9
    • 1.95
    • 2
    • 2.05
    • 2.1
    • 2.3
    • 2.35
    • 2.4
    • 2.5
    • 2.6
    • 2.7

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  • Eoff @25℃(mJ)
    • 0.25
    • 0.3
    • 0.33
    • 0.35
    • 0.38
    • 0.45
    • 0.5
    • 0.6
    • 0.65
    • 0.7
    • 0.72
    • 0.75
    • 0.9
    • 1
    • 1.05
    • 1.12
    • 1.2
    • 1.24
    • 1.25
    • 1.4
    • 1.65

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  • Eoff @175℃(mJ)
    • 0.4
    • 0.45
    • 0.49
    • 0.6
    • 0.65
    • 0.7
    • 0.8
    • 0.85
    • 1
    • 1.05
    • 1.25
    • 1.35
    • 1.5
    • 1.55
    • 1.56
    • 1.6
    • 1.65
    • 1.69
    • 1.85
    • 2.2

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  • VF @25℃(V)
    • -
    • 1.67
    • 1.7
    • 1.75
    • 1.85
    • 1.9
    • 1.95
    • 2
    • 2.05
    • 2.1

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  • VF @175℃(V)
    • -
    • 1.37
    • 1.45
    • 1.5
    • 1.55
    • 1.6
    • 1.65
    • 1.73
    • 1.75

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  • Qrr @25℃(nC)
    • -
    • 148
    • 166
    • 221
    • 300
    • 321
    • 336
    • 435
    • 454
    • 456
    • 570
    • 592
    • 617
    • 871
    • 910

    Reset filter

  • Qrr @175℃(nC)
    • -
    • 500
    • 508
    • 990
    • 1193
    • 1265
    • 1318
    • 1622
    • 1642
    • 1662
    • 1751
    • 1942
    • 2232
    • 2527
    • 2994
    • 3600

    Reset filter

  • SCWT(uS)
    • 5

    Reset filter

  • Tj(max)(℃)
    • 175

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  • Qualification
    • Industrial

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  • TO247

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.4

    1.55

    2.05

    0.3

    0.45

    1.9

    1.45

    148

    508

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    4.5

    1.45

    1.8

    0.33

    0.49

    1.9

    1.45

    148

    508

    175

    Industrial

  • TO220F

    Trench Field-stop

    Yes

    650

    17

    67

    ±20

    5.4

    1.55

    2.05

    0.3

    0.45

    1.9

    1.45

    148

    508

    175

    Industrial

  • TO220

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.4

    1.55

    2.05

    0.3

    0.45

    1.9

    1.5

    221

    990

    175

    Industrial

  • TO263

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.4

    1.55

    2.05

    0.3

    0.45

    1.9

    1.5

    221

    990

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.4

    1.55

    2.05

    0.3

    0.45

    1.9

    1.5

    221

    990

    175

    Industrial

  • IITO247

    Trench Field-stop

    Yes

    650

    30

    150

    ±20

    5.4

    1.55

    2.05

    0.3

    0.45

    1.9

    1.45

    148

    508

    175

    Industrial

  • TO3PF

    Trench Field-stop

    No

    650

    17

    67

    ±20

    5.4

    1.55

    2.05

    0.3

    0.45

    -

    -

    -

    -

    175

    Industrial

  • IITO247

    Trench Field-stop

    Yes

    650

    30

    150

    ±20

    4.5

    1.45

    1.8

    0.33

    0.49

    1.75

    1.45

    336

    1193

    175

    Industrial

  • TO220

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.5

    1.6

    2.1

    0.38

    0.6

    1.9

    1.45

    148

    508

    5

    175

    Industrial

  • TO3PF

    Trench Field-stop

    Yes

    650

    75

    125

    ±20

    4.3

    1.5

    1.9

    1.25

    1.5

    1.9

    1.5

    148

    508

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.5

    1.6

    2.1

    0.38

    0.6

    1.9

    1.45

    148

    508

    5

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    40

    312

    ±20

    5.4

    1.85

    2.6

    0.5

    0.8

    1.67

    1.37

    456

    1751

    5

    175

    Industrial

  • TO220F

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.5

    1.6

    2.1

    0.38

    0.6

    1.9

    1.45

    148

    508

    5

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    40

    312

    ±20

    5.4

    1.75

    2.4

    0.45

    0.65

    2.05

    1.73

    300

    1318

    175

    Industrial

  • TO220

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.5

    1.6

    2.1

    0.38

    0.6

    1.9

    1.5

    221

    990

    5

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    50

    454

    ±20

    4.5

    1.55

    1.95

    0.6

    0.7

    1.9

    1.45

    148

    508

    175

    Industrial

  • TO263

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.5

    1.6

    2.1

    0.38

    0.6

    1.9

    1.5

    221

    990

    5

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    50

    312

    ±20

    4.5

    1.75

    2.35

    0.65

    0.8

    1.75

    1.45

    336

    1193

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.5

    1.6

    2.1

    0.38

    0.6

    1.9

    1.5

    221

    990

    5

    175

    Industrial

  • WG30N65HAW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      2.05

    • Eoff @25℃(mJ):

      0.3

    • Eoff @175℃(mJ):

      0.45

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65HAW2
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      4.5

    • VCE(sat)@25℃ Typ.(V):

      1.45

    • VCE(sat)@175℃(V):

      1.8

    • Eoff @25℃(mJ):

      0.33

    • Eoff @175℃(mJ):

      0.49

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65HAX1
    • Package:

      TO220F

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      17

    • PD @25℃(W):

      67

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      2.05

    • Eoff @25℃(mJ):

      0.3

    • Eoff @175℃(mJ):

      0.45

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65HF1
    • Package:

      TO220

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      2.05

    • Eoff @25℃(mJ):

      0.3

    • Eoff @175℃(mJ):

      0.45

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      221

    • Qrr @175℃(nC):

      990

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65HFB1
    • Package:

      TO263

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      2.05

    • Eoff @25℃(mJ):

      0.3

    • Eoff @175℃(mJ):

      0.45

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      221

    • Qrr @175℃(nC):

      990

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65HFW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      2.05

    • Eoff @25℃(mJ):

      0.3

    • Eoff @175℃(mJ):

      0.45

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      221

    • Qrr @175℃(nC):

      990

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65HAE1
    • Package:

      IITO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      150

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      2.05

    • Eoff @25℃(mJ):

      0.3

    • Eoff @175℃(mJ):

      0.45

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65HJ1
    • Package:

      TO3PF

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      No

    • Voltage class(V):

      650

    • Ic @100℃(A):

      17

    • PD @25℃(W):

      67

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      2.05

    • Eoff @25℃(mJ):

      0.3

    • Eoff @175℃(mJ):

      0.45

    • VF @25℃(V):

      -

    • VF @175℃(V):

      -

    • Qrr @25℃(nC):

      -

    • Qrr @175℃(nC):

      -

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65HFE1
    • Package:

      IITO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      150

    • VGE(V):

      ±20

    • VGEth(V):

      4.5

    • VCE(sat)@25℃ Typ.(V):

      1.45

    • VCE(sat)@175℃(V):

      1.8

    • Eoff @25℃(mJ):

      0.33

    • Eoff @175℃(mJ):

      0.49

    • VF @25℃(V):

      1.75

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      336

    • Qrr @175℃(nC):

      1193

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65MA1
    • Package:

      TO220

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.5

    • VCE(sat)@25℃ Typ.(V):

      1.6

    • VCE(sat)@175℃(V):

      2.1

    • Eoff @25℃(mJ):

      0.38

    • Eoff @175℃(mJ):

      0.6

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG75N65HDJ1
    • Package:

      TO3PF

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      75

    • PD @25℃(W):

      125

    • VGE(V):

      ±20

    • VGEth(V):

      4.3

    • VCE(sat)@25℃ Typ.(V):

      1.5

    • VCE(sat)@175℃(V):

      1.9

    • Eoff @25℃(mJ):

      1.25

    • Eoff @175℃(mJ):

      1.5

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65MAW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.5

    • VCE(sat)@25℃ Typ.(V):

      1.6

    • VCE(sat)@175℃(V):

      2.1

    • Eoff @25℃(mJ):

      0.38

    • Eoff @175℃(mJ):

      0.6

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG40S65MFW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      40

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.85

    • VCE(sat)@175℃(V):

      2.6

    • Eoff @25℃(mJ):

      0.5

    • Eoff @175℃(mJ):

      0.8

    • VF @25℃(V):

      1.67

    • VF @175℃(V):

      1.37

    • Qrr @25℃(nC):

      456

    • Qrr @175℃(nC):

      1751

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65MAX1
    • Package:

      TO220F

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.5

    • VCE(sat)@25℃ Typ.(V):

      1.6

    • VCE(sat)@175℃(V):

      2.1

    • Eoff @25℃(mJ):

      0.38

    • Eoff @175℃(mJ):

      0.6

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG40S65HFW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      40

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.75

    • VCE(sat)@175℃(V):

      2.4

    • Eoff @25℃(mJ):

      0.45

    • Eoff @175℃(mJ):

      0.65

    • VF @25℃(V):

      2.05

    • VF @175℃(V):

      1.73

    • Qrr @25℃(nC):

      300

    • Qrr @175℃(nC):

      1318

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65MF1
    • Package:

      TO220

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.5

    • VCE(sat)@25℃ Typ.(V):

      1.6

    • VCE(sat)@175℃(V):

      2.1

    • Eoff @25℃(mJ):

      0.38

    • Eoff @175℃(mJ):

      0.6

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      221

    • Qrr @175℃(nC):

      990

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG50N65HDW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      50

    • PD @25℃(W):

      454

    • VGE(V):

      ±20

    • VGEth(V):

      4.5

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      1.95

    • Eoff @25℃(mJ):

      0.6

    • Eoff @175℃(mJ):

      0.7

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65MFB1
    • Package:

      TO263

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.5

    • VCE(sat)@25℃ Typ.(V):

      1.6

    • VCE(sat)@175℃(V):

      2.1

    • Eoff @25℃(mJ):

      0.38

    • Eoff @175℃(mJ):

      0.6

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      221

    • Qrr @175℃(nC):

      990

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG50S65HAW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      50

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      4.5

    • VCE(sat)@25℃ Typ.(V):

      1.75

    • VCE(sat)@175℃(V):

      2.35

    • Eoff @25℃(mJ):

      0.65

    • Eoff @175℃(mJ):

      0.8

    • VF @25℃(V):

      1.75

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      336

    • Qrr @175℃(nC):

      1193

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65MFW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.5

    • VCE(sat)@25℃ Typ.(V):

      1.6

    • VCE(sat)@175℃(V):

      2.1

    • Eoff @25℃(mJ):

      0.38

    • Eoff @175℃(mJ):

      0.6

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      221

    • Qrr @175℃(nC):

      990

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

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