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650V Discrete IGBTs

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  • Package
    • TO220-2L
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  • Technology
    • 600
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  • Build-in Diode
    • 20
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  • Voltage class(V)
    • 1.4
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  • Ic @100℃(A)
    • 28
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  • PD @25℃(W)
    • 200
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  • VGE(V)
    • 175
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  • VGEth(V)
    • 1
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  • VCE(sat)@25℃ Typ.(V)
    • Hypefast Rectifier
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  • VCE(sat)@175℃(V)
    • Industrial
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  • Eoff @25℃(mJ)
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  • Eoff @175℃(mJ)
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  • VF @25℃(V)
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  • VF @175℃(V)
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  • Qrr @25℃(nC)
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  • Qrr @175℃(nC)
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  • SCWT(uS)
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  • Tj(max)(℃)
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  • Qualification
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  • Package
    • TO220-2L

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  • Technology
    • 600

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  • Build-in Diode
    • 20

    Reset filter

  • Voltage class(V)
    • 1.4

    Reset filter

  • Ic @100℃(A)
    • 28

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  • PD @25℃(W)
    • 200

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  • VGE(V)
    • 175

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  • VGEth(V)
    • 1

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  • VCE(sat)@25℃ Typ.(V)
    • Hypefast Rectifier

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  • VCE(sat)@175℃(V)
    • Industrial

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  • Eoff @25℃(mJ)

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  • Eoff @175℃(mJ)

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  • VF @25℃(V)

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  • VF @175℃(V)

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  • Qrr @25℃(nC)

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  • Qrr @175℃(nC)

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  • SCWT(uS)

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  • Tj(max)(℃)

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  • Qualification

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  • TO247

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.4

    1.55

    2.05

    0.3

    0.45

    1.9

    1.45

    148

    508

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    4.5

    1.45

    1.8

    0.33

    0.49

    1.9

    1.45

    148

    508

    175

    Industrial

  • TO220F

    Trench Field-stop

    Yes

    650

    17

    67

    ±20

    5.4

    1.55

    2.05

    0.3

    0.45

    1.9

    1.45

    148

    508

    175

    Industrial

  • TO220

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.4

    1.55

    2.05

    0.3

    0.45

    1.9

    1.5

    221

    990

    175

    Industrial

  • TO263

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.4

    1.55

    2.05

    0.3

    0.45

    1.9

    1.5

    221

    990

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.4

    1.55

    2.05

    0.3

    0.45

    1.9

    1.5

    221

    990

    175

    Industrial

  • TO3PF

    Trench Field-stop

    No

    650

    17

    67

    ±20

    5.4

    1.55

    2.05

    0.3

    0.45

    -

    -

    -

    -

    175

    Industrial

  • TO220

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.5

    1.6

    2.1

    0.38

    0.6

    1.9

    1.45

    148

    508

    5

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.5

    1.6

    2.1

    0.38

    0.6

    1.9

    1.45

    148

    508

    5

    175

    Industrial

  • TO220F

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.5

    1.6

    2.1

    0.38

    0.6

    1.9

    1.45

    148

    508

    5

    175

    Industrial

  • TO220

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.5

    1.6

    2.1

    0.38

    0.6

    1.9

    1.5

    221

    990

    5

    175

    Industrial

  • TO263

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.5

    1.6

    2.1

    0.38

    0.6

    1.9

    1.5

    221

    990

    5

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.5

    1.6

    2.1

    0.38

    0.6

    1.9

    1.5

    221

    990

    5

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    4.5

    1.45

    1.8

    0.33

    0.49

    1.9

    1.45

    148

    508

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    4.5

    1.45

    1.8

    0.33

    0.49

    1.9

    1.5

    221

    990

    175

    Industrial

  • TO3PF

    Trench Field-stop

    Yes

    650

    15

    66

    ±20

    5.2

    1.5

    1.95

    1

    1.5

    1.9

    1.5

    221

    990

    5

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    40

    375

    ±20

    5.1

    1.5

    1.95

    1

    1.5

    1.9

    1.5

    221

    990

    5

    175

    Industrial

  • TO3PF

    Trench Field-stop

    Yes

    650

    50

    278

    ±20

    5

    1.65

    2.05

    0.6

    0.8

    1.7

    1.55

    570

    1265

    175

    Industrial

  • TO3PF

    Trench Field-stop

    Yes

    650

    50

    78

    ±20

    5

    1.25

    1.5

    1.24

    1.69

    1.9

    1.45

    148

    508

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    50

    278

    ±20

    5

    1.65

    2.05

    0.6

    0.8

    1.7

    1.55

    570

    1265

    175

    Industrial

  • WG30N65HAW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      2.05

    • Eoff @25℃(mJ):

      0.3

    • Eoff @175℃(mJ):

      0.45

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65HAW2
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      4.5

    • VCE(sat)@25℃ Typ.(V):

      1.45

    • VCE(sat)@175℃(V):

      1.8

    • Eoff @25℃(mJ):

      0.33

    • Eoff @175℃(mJ):

      0.49

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65HAX1
    • Package:

      TO220F

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      17

    • PD @25℃(W):

      67

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      2.05

    • Eoff @25℃(mJ):

      0.3

    • Eoff @175℃(mJ):

      0.45

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65HF1
    • Package:

      TO220

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      2.05

    • Eoff @25℃(mJ):

      0.3

    • Eoff @175℃(mJ):

      0.45

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      221

    • Qrr @175℃(nC):

      990

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65HFB1
    • Package:

      TO263

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      2.05

    • Eoff @25℃(mJ):

      0.3

    • Eoff @175℃(mJ):

      0.45

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      221

    • Qrr @175℃(nC):

      990

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65HFW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      2.05

    • Eoff @25℃(mJ):

      0.3

    • Eoff @175℃(mJ):

      0.45

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      221

    • Qrr @175℃(nC):

      990

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65HJ1
    • Package:

      TO3PF

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      No

    • Voltage class(V):

      650

    • Ic @100℃(A):

      17

    • PD @25℃(W):

      67

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      2.05

    • Eoff @25℃(mJ):

      0.3

    • Eoff @175℃(mJ):

      0.45

    • VF @25℃(V):

      -

    • VF @175℃(V):

      -

    • Qrr @25℃(nC):

      -

    • Qrr @175℃(nC):

      -

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65MA1
    • Package:

      TO220

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.5

    • VCE(sat)@25℃ Typ.(V):

      1.6

    • VCE(sat)@175℃(V):

      2.1

    • Eoff @25℃(mJ):

      0.38

    • Eoff @175℃(mJ):

      0.6

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65MAW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.5

    • VCE(sat)@25℃ Typ.(V):

      1.6

    • VCE(sat)@175℃(V):

      2.1

    • Eoff @25℃(mJ):

      0.38

    • Eoff @175℃(mJ):

      0.6

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65MAX1
    • Package:

      TO220F

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.5

    • VCE(sat)@25℃ Typ.(V):

      1.6

    • VCE(sat)@175℃(V):

      2.1

    • Eoff @25℃(mJ):

      0.38

    • Eoff @175℃(mJ):

      0.6

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65MF1
    • Package:

      TO220

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.5

    • VCE(sat)@25℃ Typ.(V):

      1.6

    • VCE(sat)@175℃(V):

      2.1

    • Eoff @25℃(mJ):

      0.38

    • Eoff @175℃(mJ):

      0.6

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      221

    • Qrr @175℃(nC):

      990

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65MFB1
    • Package:

      TO263

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.5

    • VCE(sat)@25℃ Typ.(V):

      1.6

    • VCE(sat)@175℃(V):

      2.1

    • Eoff @25℃(mJ):

      0.38

    • Eoff @175℃(mJ):

      0.6

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      221

    • Qrr @175℃(nC):

      990

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65MFW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.5

    • VCE(sat)@25℃ Typ.(V):

      1.6

    • VCE(sat)@175℃(V):

      2.1

    • Eoff @25℃(mJ):

      0.38

    • Eoff @175℃(mJ):

      0.6

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      221

    • Qrr @175℃(nC):

      990

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65UAW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      4.5

    • VCE(sat)@25℃ Typ.(V):

      1.45

    • VCE(sat)@175℃(V):

      1.8

    • Eoff @25℃(mJ):

      0.33

    • Eoff @175℃(mJ):

      0.49

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65UFW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      4.5

    • VCE(sat)@25℃ Typ.(V):

      1.45

    • VCE(sat)@175℃(V):

      1.8

    • Eoff @25℃(mJ):

      0.33

    • Eoff @175℃(mJ):

      0.49

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      221

    • Qrr @175℃(nC):

      990

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG40N65DFJ
    • Package:

      TO3PF

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      15

    • PD @25℃(W):

      66

    • VGE(V):

      ±20

    • VGEth(V):

      5.2

    • VCE(sat)@25℃ Typ.(V):

      1.5

    • VCE(sat)@175℃(V):

      1.95

    • Eoff @25℃(mJ):

      1

    • Eoff @175℃(mJ):

      1.5

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      221

    • Qrr @175℃(nC):

      990

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG40N65DFW
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      40

    • PD @25℃(W):

      375

    • VGE(V):

      ±20

    • VGEth(V):

      5.1

    • VCE(sat)@25℃ Typ.(V):

      1.5

    • VCE(sat)@175℃(V):

      1.95

    • Eoff @25℃(mJ):

      1

    • Eoff @175℃(mJ):

      1.5

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      221

    • Qrr @175℃(nC):

      990

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG50N65DHJ
    • Package:

      TO3PF

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      50

    • PD @25℃(W):

      278

    • VGE(V):

      ±20

    • VGEth(V):

      5

    • VCE(sat)@25℃ Typ.(V):

      1.65

    • VCE(sat)@175℃(V):

      2.05

    • Eoff @25℃(mJ):

      0.6

    • Eoff @175℃(mJ):

      0.8

    • VF @25℃(V):

      1.7

    • VF @175℃(V):

      1.55

    • Qrr @25℃(nC):

      570

    • Qrr @175℃(nC):

      1265

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG50N65DHJ1
    • Package:

      TO3PF

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      50

    • PD @25℃(W):

      78

    • VGE(V):

      ±20

    • VGEth(V):

      5

    • VCE(sat)@25℃ Typ.(V):

      1.25

    • VCE(sat)@175℃(V):

      1.5

    • Eoff @25℃(mJ):

      1.24

    • Eoff @175℃(mJ):

      1.69

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG50N65DHW
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      50

    • PD @25℃(W):

      278

    • VGE(V):

      ±20

    • VGEth(V):

      5

    • VCE(sat)@25℃ Typ.(V):

      1.65

    • VCE(sat)@175℃(V):

      2.05

    • Eoff @25℃(mJ):

      0.6

    • Eoff @175℃(mJ):

      0.8

    • VF @25℃(V):

      1.7

    • VF @175℃(V):

      1.55

    • Qrr @25℃(nC):

      570

    • Qrr @175℃(nC):

      1265

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

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