WG30N65MAX1

650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

Parametric

  • Package

    TO220F

  • Technology

    Trench Field-stop

  • Build-in Diode

    Yes

  • Voltage class(V)

    650

  • Ic @100℃(A)

    30

  • PD @25℃(W)

    312

  • VGE(V)

    ±20

  • VGEth(V)

    5.5

  • VCE(sat)@25℃ Typ.(V)

    1.6

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
WG30N65MAX1 9340 741 19127 WG30N65MAX1Q TO220F HORIZONTAL, RAIL PACK Volume production RoHS compliant, Pb-Free lead plating, RHF H NA Chinese_RoHS_2.pdf

Relevant documents

Looking for Something else?

Please fill in the following to download the information

  • I have read and agree to the WeEn SemiconductorsPrivacy Policy.
  • Submit