Silicon Carbide

Silicon Carbide (SiC) is a widely used semiconductor material for medium to high voltage power components. This is due to its inherent properties of wide band gap and high thermal conductivity.

Introduction
Product category
Advantages
Related applications

Introduction

WeEn-semi SiC Diodes offers 650V and 1200V platforms, featured with small chip size and 150um thin wafer to provide the best-in-class product competitiveness. WeEn Gen-6 SiC SBD optimizes the ratio of Schottky contact to PN junction area to achieve ultra-low Vf (typical 1.26V) and provides extremely low on-state resistance through optimizing the doping concentration of EPi layer and wafer thinning. WeEn's innovative MPS structure obviously increase the current surge capability. The advanced Ag-sintering technology makes the perfect combination of product performance and reliability.

SiC MOSFET The WeEn-semi's Gen-2 planar gate sillicon carbide MOSFET represented by 12mΩ/1200V in wafer design, by optimizing the key parameters such as JFET width and source contact area width, using smaller cell size, combined with advanced SiC wafer thinning technology of

WeEn-semi, results in very low Ron,sp(specific on-resistivity) =3mΩ*cm2@20Vgs. The product can be adopted in both 15V and 18V gate driving conditions, which will improve the device's compatibility. Moreover, the product has passed the HTGB reliability test with -12V~+24V bias gate voltage and provides the best-in-class Gate Endurance(TDDB) performance.