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SiC MOSFET

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Show 52 products

  • Package
    • TO247
    • TO247-4L
    • TO263-7L
    • TO3PF
    • TSPAK
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  • Product Status
    • Active
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  • Configuration
    • Single
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  • VDS(V)
    • 650
    • 1200
    • 1400
    • 1700
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  • RDS(ON)@15Vgs (mΩ)
    • -
    • 12
    • 20
    • 30
    • 40
    • 45
    • 60
    • 75
    • 150
    • 1000
    Reset filter
  • RDS(ON)@18Vgs (mΩ)
    • 9.8
    • 16
    • 16.3
    • 24
    • 33
    • 49
    • 58
    • 64
    • 65
    • 91
    • 120
    • 160
    • 750
    Reset filter
  • Vth(typ) (V)
    • 2.2
    • 2.6
    • 3.2
    • 3.5
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  • ID(A)
    • 4.6
    • 6
    • 6.3
    • 7
    • 7.5
    • 23.4
    • 24
    • 24.6
    • 28.7
    • 29
    • 38
    • 42
    • 42.6
    • 42.8
    • 43
    • 45
    • 48.1
    • 49
    • 50.9
    • 53
    • 53.9
    • 55
    • 58
    • 61
    • 61.1
    • 70
    • 70.4
    • 77
    • 81
    • 82
    • 84
    • 86.3
    • 91
    • 93
    • 97
    • 104.2
    • 106.4
    • 128
    • 134
    • 139
    • 151
    • 154
    • 154.4
    • 158.6
    • 165
    • 210
    • 216
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  • Qg(nC)
    • 12
    • 26
    • 35
    • 40
    • 52
    • 59
    • 62
    • 63
    • 83
    • 87
    • 115
    • 151
    • 191
    • 215
    • 321
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  • Tj(max)(℃)
    • 175
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  • Qualification
    • Automotive
    • Industrial
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  • Type Name
  • Compare
    Show All
  • Package
    • TO247
    • TO247-4L
    • TO263-7L
    • TO3PF
    • TSPAK

    Reset filter

  • Product Status
    • Active

    Reset filter

  • Configuration
    • Single

    Reset filter

  • VDS(V)
    • 650
    • 1200
    • 1400
    • 1700

    Reset filter

  • RDS(ON)@15Vgs (mΩ)
    • -
    • 12
    • 20
    • 30
    • 40
    • 45
    • 60
    • 75
    • 150
    • 1000

    Reset filter

  • RDS(ON)@18Vgs (mΩ)
    • 9.8
    • 16
    • 16.3
    • 24
    • 33
    • 49
    • 58
    • 64
    • 65
    • 91
    • 120
    • 160
    • 750

    Reset filter

  • Vth(typ) (V)
    • 2.2
    • 2.6
    • 3.2
    • 3.5

    Reset filter

  • ID(A)
    • 4.6
    • 6
    • 6.3
    • 7
    • 7.5
    • 23.4
    • 24
    • 24.6
    • 28.7
    • 29
    • 38
    • 42
    • 42.6
    • 42.8
    • 43
    • 45
    • 48.1
    • 49
    • 50.9
    • 53
    • 53.9
    • 55
    • 58
    • 61
    • 61.1
    • 70
    • 70.4
    • 77
    • 81
    • 82
    • 84
    • 86.3
    • 91
    • 93
    • 97
    • 104.2
    • 106.4
    • 128
    • 134
    • 139
    • 151
    • 154
    • 154.4
    • 158.6
    • 165
    • 210
    • 216

    Reset filter

  • Qg(nC)
    • 12
    • 26
    • 35
    • 40
    • 52
    • 59
    • 62
    • 63
    • 83
    • 87
    • 115
    • 151
    • 191
    • 215
    • 321

    Reset filter

  • Tj(max)(℃)
    • 175

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  • Qualification
    • Automotive
    • Industrial

    Reset filter

  • TO247

    Active

    Single

    1200

    75

    58

    2.2

    38

    52

    175

    Automotive

  • TO247-4L

    Active

    Single

    1200

    75

    65

    2.2

    55

    62

    175

    Automotive

  • TO263-7L

    Active

    Single

    1200

    75

    64

    2.2

    43

    63

    175

    Automotive

  • TO247

    Active

    Single

    1200

    60

    49

    2.6

    48.1

    83

    175

    Automotive

  • TSPAK

    Active

    Single

    650

    20

    16

    2.6

    151

    191

    175

    Industrial

  • TSPAK

    Active

    Single

    1200

    150

    120

    2.6

    24.6

    40

    175

    Industrial

  • TSPAK

    Active

    Single

    1200

    75

    65

    2.2

    42.6

    62

    175

    Industrial

  • TSPAK

    Active

    Single

    1200

    40

    33

    2.6

    77

    115

    175

    Industrial

  • TSPAK

    Active

    Single

    1200

    30

    24

    2.6

    97

    151

    175

    Industrial

  • TSPAK

    Active

    Single

    1200

    20

    16.3

    2.6

    134

    215

    175

    Industrial

  • TSPAK

    Active

    Single

    1200

    12

    9.8

    2.6

    210

    321

    175

    Industrial

  • TO247-4L

    Active

    Single

    1200

    60

    49

    2.6

    61

    83

    175

    Automotive

  • TO263-7L

    Active

    Single

    1200

    60

    49

    2.6

    53

    83

    175

    Automotive

  • TO247-4L

    Active

    Single

    1200

    40

    33

    2.6

    81

    115

    175

    Automotive

  • TO263-7L

    Active

    Single

    1200

    40

    33

    2.6

    70

    115

    175

    Automotive

  • TO247-4L

    Active

    Single

    1200

    30

    24

    2.6

    93

    151

    175

    Automotive

  • TO263-7L

    Active

    Single

    1200

    30

    24

    2.6

    93

    151

    175

    Automotive

  • TO247-4L

    Active

    Single

    1200

    20

    16.3

    2.6

    139

    215

    175

    Automotive

  • TO263-7L

    Active

    Single

    1200

    20

    16.3

    2.6

    128

    215

    175

    Automotive

  • TO247-4L

    Active

    Single

    650

    20

    16

    2.6

    154

    191

    175

    Industrial

  • WNSC2M75120W-A
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO247 plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M75120R-A
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M75120B7-A
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M60120W-A
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO247 plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M20065TB
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TSPAK plastic package with top side cooling structure, designed for high frequency, high efficiency systems.

  • WNSC2M150120TB
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TSPAK plastic package with top side cooling structure, designed for high frequency, high efficiency systems.

  • WNSC2M75120TB
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TSPAK plastic package with top side cooling structure, designed for high frequency, high efficiency systems.

  • WNSC2M40120TB
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TSPAK plastic package with top side cooling structure, designed for high frequency, high efficiency systems.

  • WNSC2M30120TB
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TSPAK plastic package with top side cooling structure, designed for high frequency, high efficiency systems.

  • WNSC2M20120TB
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TSPAK plastic package with top side cooling structure, designed for high frequency, high efficiency systems.

  • WNSC2M12120TB
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TSPAK plastic package with top side cooling structure, designed for high frequency, high efficiency systems.

  • WNSC2M60120R-A
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M60120B7-A
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M40120R-A
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M40120B7-A
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M30120R-A
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M30120B7-A
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M20120R-A
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M20120B7-A
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M20065R
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16

    • Vth(typ) (V):

      2.6

    • ID(A):

      154

    • Qg(nC):

      191

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

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