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Introduction
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Product category
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Latest Product
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Advantages
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Related applications
Introduction
WeEn IGBT technology has matured through in-depth R&D and meticulous polishing. The innovative design, including both electric field optimized and leakage current containment additive termination deign and performance improved cell structure design, to make sure the superior behavior of WeEn IGBTs in terms of both electric performance and reliability.
WeEn IGBT products have extremely strict certification process. Strictly in accordance with JEDEC standards on product qualification to ensure that the product's ultra-high reliability and zero defects. Meanwhile, WeEn IGBT product can pass 80% BV bias H3TRB test and 100% BV bias HTRB test at 175oC degrees which is an exclusive feature of the product qualified at industrial standard.
WeEn IGBT products have excellent electric performance. Based on the excellent design capability and rich development experience, and combined with the deep understanding of the application of IGBT devices, WeEn has defined and developed a series of products with exclusive performance parameters suitable for specific end applications, as well as a series of general products with universal parameters. In short, the overall performance of WeEn IGBT product can be fully comparable with the tire 1 international IGBT suppliers.
Outstanding product performance and excellent product reliability can promote the competitiveness of customer products, energy saving and efficiency at the same time to protect the quality of customer products, reduce product failure rate. At the same time, the "Easy to Use" feature of WeEn's IGBT products can reduce the difficulty of customer design and debugging, and improve the development efficiency as well.
Latest Product
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WMHG150N07B2P-B
IGBT module integrates inhouse IGBT chips, FRD chips as well as silicon carbid chips which can offer the best class electrical performance as well product reliability. The modules are ease to use and can help to significantly reduce the power losses and improve the power system efficiency.
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WG30R135W1
This device is Reverse-Conducting IGBT which uses advanced Fine Trench Field-stop technology integrated with monolithic body diode. It represents an optimum compromise between conduction and switching losses to maximize the efficiency for soft commutation.
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WG75N65UFW1
650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.
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WG140N120HFP1
1200V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.
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Why Choose Our IGBTs Products
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Excellent static and dynamic electrical performance
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Srigent product qualification per JEDEC standar
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Highest product ruggedness and quality
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Very easy to use without additional debugging efforts
