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Automotive SiC MOSFET

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  • Package
    • TO247
    • TO247-4L
    • TO263-7L
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  • Product Status
    • Active
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  • Configuration
    • Single
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  • VDS(V)
    • 1200
    • 1700
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  • RDS(ON) @15Vgs (mΩ)
    • 20
    • 30
    • 40
    • 60
    • 75
    • 150
    • 1000
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  • RDS(ON) @18Vgs (mΩ)
    • 16.3
    • 24
    • 33
    • 49
    • 58
    • 64
    • 65
    • 120
    • 750
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  • Vth(typ)(V)
    • 2.2
    • 2.6
    • 3.2
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  • ID(A)
    • 6
    • 6.3
    • 23.4
    • 24
    • 38
    • 43
    • 48.1
    • 53
    • 55
    • 61
    • 70
    • 81
    • 93
    • 128
    • 139
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  • Qg(nC)
    • 12
    • 26
    • 40
    • 52
    • 62
    • 63
    • 83
    • 115
    • 151
    • 215
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  • Tj(max)(℃)
    • 175
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  • Qualification
    • Automotive
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  • Type Name
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  • Package
    • TO247
    • TO247-4L
    • TO263-7L

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  • Product Status
    • Active

    Reset filter

  • Configuration
    • Single

    Reset filter

  • VDS(V)
    • 1200
    • 1700

    Reset filter

  • RDS(ON) @15Vgs (mΩ)
    • 20
    • 30
    • 40
    • 60
    • 75
    • 150
    • 1000

    Reset filter

  • RDS(ON) @18Vgs (mΩ)
    • 16.3
    • 24
    • 33
    • 49
    • 58
    • 64
    • 65
    • 120
    • 750

    Reset filter

  • Vth(typ)(V)
    • 2.2
    • 2.6
    • 3.2

    Reset filter

  • ID(A)
    • 6
    • 6.3
    • 23.4
    • 24
    • 38
    • 43
    • 48.1
    • 53
    • 55
    • 61
    • 70
    • 81
    • 93
    • 128
    • 139

    Reset filter

  • Qg(nC)
    • 12
    • 26
    • 40
    • 52
    • 62
    • 63
    • 83
    • 115
    • 151
    • 215

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  • Tj(max)(℃)
    • 175

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  • Qualification
    • Automotive

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  • TO247

    Active

    Single

    1200

    75

    58

    2.2

    38

    52

    175

    Automotive

  • TO247-4L

    Active

    Single

    1200

    75

    65

    2.2

    55

    62

    175

    Automotive

  • TO263-7L

    Active

    Single

    1200

    75

    64

    2.2

    43

    63

    175

    Automotive

  • TO247

    Active

    Single

    1200

    60

    49

    2.6

    48.1

    83

    175

    Automotive

  • TO247-4L

    Active

    Single

    1200

    60

    49

    2.6

    61

    83

    175

    Automotive

  • TO263-7L

    Active

    Single

    1200

    60

    49

    2.6

    53

    83

    175

    Automotive

  • TO247-4L

    Active

    Single

    1200

    40

    33

    2.6

    81

    115

    175

    Automotive

  • TO263-7L

    Active

    Single

    1200

    40

    33

    2.6

    70

    115

    175

    Automotive

  • TO247-4L

    Active

    Single

    1200

    30

    24

    2.6

    93

    151

    175

    Automotive

  • TO263-7L

    Active

    Single

    1200

    30

    24

    2.6

    93

    151

    175

    Automotive

  • TO247-4L

    Active

    Single

    1200

    20

    16.3

    2.6

    139

    215

    175

    Automotive

  • TO263-7L

    Active

    Single

    1200

    20

    16.3

    2.6

    128

    215

    175

    Automotive

  • TO247

    Active

    Single

    1700

    1000

    750

    3.2

    6.3

    12

    175

    Automotive

  • TO263-7L

    Active

    Single

    1700

    1000

    750

    3.2

    6

    12

    175

    Automotive

  • TO247

    Active

    Single

    1200

    150

    120

    2.6

    23.4

    26

    175

    Automotive

  • TO263-7L

    Active

    Single

    1200

    150

    120

    2.6

    24

    40

    175

    Automotive

  • WNSC2M75120W-A
    • Package:

      TO247

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      75

    • RDS(ON) @18Vgs (mΩ):

      58

    • Vth(typ)(V):

      2.2

    • ID(A):

      38

    • Qg(nC):

      52

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO247 plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M75120R-A
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      75

    • RDS(ON) @18Vgs (mΩ):

      65

    • Vth(typ)(V):

      2.2

    • ID(A):

      55

    • Qg(nC):

      62

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M75120B7-A
    • Package:

      TO263-7L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      75

    • RDS(ON) @18Vgs (mΩ):

      64

    • Vth(typ)(V):

      2.2

    • ID(A):

      43

    • Qg(nC):

      63

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M60120W-A
    • Package:

      TO247

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      60

    • RDS(ON) @18Vgs (mΩ):

      49

    • Vth(typ)(V):

      2.6

    • ID(A):

      48.1

    • Qg(nC):

      83

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO247 plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M60120R-A
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      60

    • RDS(ON) @18Vgs (mΩ):

      49

    • Vth(typ)(V):

      2.6

    • ID(A):

      61

    • Qg(nC):

      83

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M60120B7-A
    • Package:

      TO263-7L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      60

    • RDS(ON) @18Vgs (mΩ):

      49

    • Vth(typ)(V):

      2.6

    • ID(A):

      53

    • Qg(nC):

      83

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M40120R-A
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      40

    • RDS(ON) @18Vgs (mΩ):

      33

    • Vth(typ)(V):

      2.6

    • ID(A):

      81

    • Qg(nC):

      115

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M40120B7-A
    • Package:

      TO263-7L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      40

    • RDS(ON) @18Vgs (mΩ):

      33

    • Vth(typ)(V):

      2.6

    • ID(A):

      70

    • Qg(nC):

      115

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M30120R-A
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      30

    • RDS(ON) @18Vgs (mΩ):

      24

    • Vth(typ)(V):

      2.6

    • ID(A):

      93

    • Qg(nC):

      151

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M30120B7-A
    • Package:

      TO263-7L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      30

    • RDS(ON) @18Vgs (mΩ):

      24

    • Vth(typ)(V):

      2.6

    • ID(A):

      93

    • Qg(nC):

      151

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M20120R-A
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      20

    • RDS(ON) @18Vgs (mΩ):

      16.3

    • Vth(typ)(V):

      2.6

    • ID(A):

      139

    • Qg(nC):

      215

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M20120B7-A
    • Package:

      TO263-7L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      20

    • RDS(ON) @18Vgs (mΩ):

      16.3

    • Vth(typ)(V):

      2.6

    • ID(A):

      128

    • Qg(nC):

      215

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M1K0170W-A
    • Package:

      TO247

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1700

    • RDS(ON) @15Vgs (mΩ):

      1000

    • RDS(ON) @18Vgs (mΩ):

      750

    • Vth(typ)(V):

      3.2

    • ID(A):

      6.3

    • Qg(nC):

      12

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M1K0170B7-A
    • Package:

      TO263-7L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1700

    • RDS(ON) @15Vgs (mΩ):

      1000

    • RDS(ON) @18Vgs (mΩ):

      750

    • Vth(typ)(V):

      3.2

    • ID(A):

      6

    • Qg(nC):

      12

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M150120W-A
    • Package:

      TO247

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      150

    • RDS(ON) @18Vgs (mΩ):

      120

    • Vth(typ)(V):

      2.6

    • ID(A):

      23.4

    • Qg(nC):

      26

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO247 plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M150120B7-A
    • Package:

      TO263-7L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      150

    • RDS(ON) @18Vgs (mΩ):

      120

    • Vth(typ)(V):

      2.6

    • ID(A):

      24

    • Qg(nC):

      40

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

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