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650V Discrete IGBTs

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  • Package
    • TO220-2L
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  • Technology
    • 600
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  • Build-in Diode
    • 20
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  • Voltage class(V)
    • 1.4
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  • Ic @100℃(A)
    • 28
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  • PD @25℃(W)
    • 200
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  • VGE(V)
    • 175
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  • VGEth(V)
    • 1
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  • VCE(sat)@25℃ Typ.(V)
    • Hypefast Rectifier
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  • VCE(sat)@175℃(V)
    • Industrial
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  • Eoff @25℃(mJ)
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  • Eoff @175℃(mJ)
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  • VF @25℃(V)
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  • VF @175℃(V)
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  • Qrr @25℃(nC)
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  • Qrr @175℃(nC)
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  • SCWT(uS)
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  • Tj(max)(℃)
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  • Qualification
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  • Package
    • TO220-2L

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  • Technology
    • 600

    Reset filter

  • Build-in Diode
    • 20

    Reset filter

  • Voltage class(V)
    • 1.4

    Reset filter

  • Ic @100℃(A)
    • 28

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  • PD @25℃(W)
    • 200

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  • VGE(V)
    • 175

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  • VGEth(V)
    • 1

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  • VCE(sat)@25℃ Typ.(V)
    • Hypefast Rectifier

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  • VCE(sat)@175℃(V)
    • Industrial

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  • Eoff @25℃(mJ)

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  • Eoff @175℃(mJ)

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  • VF @25℃(V)

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  • VF @175℃(V)

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  • Qrr @25℃(nC)

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  • Qrr @175℃(nC)

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  • SCWT(uS)

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  • Tj(max)(℃)

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  • Qualification

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  • TO247

    Trench Field-stop

    Yes

    650

    50

    454

    ±20

    4.5

    1.55

    1.95

    0.6

    0.7

    1.9

    1.5

    221

    990

    175

    Industrial

  • TO3PF

    Trench Field-stop

    Yes

    650

    50

    94

    ±20

    4.5

    1.55

    1.95

    0.6

    0.7

    1.9

    1.45

    148

    508

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    50

    454

    ±20

    4.5

    1.55

    1.95

    0.6

    0.7

    2

    1.6

    321

    1662

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    50

    454

    ±20

    5

    1.25

    1.5

    1.12

    1.56

    1.9

    1.5

    221

    990

    175

    Industrial

  • TO3PF

    Trench Field-stop

    Yes

    650

    22

    78

    ±20

    5

    1.25

    1.5

    1.24

    1.69

    1.9

    1.45

    148

    508

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    50

    454

    ±20

    5.4

    1.55

    2

    0.72

    1

    1.9

    1.5

    221

    990

    5

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    50

    378

    ±20

    5.4

    1.55

    2

    0.72

    1

    1.9

    1.45

    148

    508

    5

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    50

    454

    ±20

    5.4

    1.55

    2

    0.72

    1

    2

    1.6

    321

    1662

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    60

    454

    ±20

    5.4

    1.7

    2.3

    0.9

    1.25

    2

    1.6

    321

    1662

    5

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    75

    600

    ±20

    4.3

    1.5

    2

    1.2

    1.35

    1.85

    1.6

    910

    3600

    175

    Industrial

  • TO220

    Trench Field-stop

    Yes

    650

    30

    312

    ±20

    5.4

    1.55

    2.05

    0.3

    0.45

    1.9

    1.45

    148

    508

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    75

    600

    ±20

    4.8

    1.5

    1.85

    1.4

    1.85

    1.85

    1.6

    871

    3600

    5

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    50

    454

    ±20

    5

    1.3

    1.5

    1.12

    1.56

    2

    1.6

    321

    1622

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    650

    75

    600

    ±20

    4.2

    1.4

    1.75

    1.25

    1.55

    1.85

    1.6

    910

    3600

    175

    Industrial

  • WG50N65HAW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      50

    • PD @25℃(W):

      454

    • VGE(V):

      ±20

    • VGEth(V):

      4.5

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      1.95

    • Eoff @25℃(mJ):

      0.6

    • Eoff @175℃(mJ):

      0.7

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      221

    • Qrr @175℃(nC):

      990

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG50N65HDJ2
    • Package:

      TO3PF

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      50

    • PD @25℃(W):

      94

    • VGE(V):

      ±20

    • VGEth(V):

      4.5

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      1.95

    • Eoff @25℃(mJ):

      0.6

    • Eoff @175℃(mJ):

      0.7

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG50N65HFW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      50

    • PD @25℃(W):

      454

    • VGE(V):

      ±20

    • VGEth(V):

      4.5

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      1.95

    • Eoff @25℃(mJ):

      0.6

    • Eoff @175℃(mJ):

      0.7

    • VF @25℃(V):

      2

    • VF @175℃(V):

      1.6

    • Qrr @25℃(nC):

      321

    • Qrr @175℃(nC):

      1662

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG50N65LAW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      50

    • PD @25℃(W):

      454

    • VGE(V):

      ±20

    • VGEth(V):

      5

    • VCE(sat)@25℃ Typ.(V):

      1.25

    • VCE(sat)@175℃(V):

      1.5

    • Eoff @25℃(mJ):

      1.12

    • Eoff @175℃(mJ):

      1.56

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      221

    • Qrr @175℃(nC):

      990

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG50N65LDJ1
    • Package:

      TO3PF

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      22

    • PD @25℃(W):

      78

    • VGE(V):

      ±20

    • VGEth(V):

      5

    • VCE(sat)@25℃ Typ.(V):

      1.25

    • VCE(sat)@175℃(V):

      1.5

    • Eoff @25℃(mJ):

      1.24

    • Eoff @175℃(mJ):

      1.69

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG50N65MAW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      50

    • PD @25℃(W):

      454

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      2

    • Eoff @25℃(mJ):

      0.72

    • Eoff @175℃(mJ):

      1

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.5

    • Qrr @25℃(nC):

      221

    • Qrr @175℃(nC):

      990

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG50N65MDW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      50

    • PD @25℃(W):

      378

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      2

    • Eoff @25℃(mJ):

      0.72

    • Eoff @175℃(mJ):

      1

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG50N65MFW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      50

    • PD @25℃(W):

      454

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      2

    • Eoff @25℃(mJ):

      0.72

    • Eoff @175℃(mJ):

      1

    • VF @25℃(V):

      2

    • VF @175℃(V):

      1.6

    • Qrr @25℃(nC):

      321

    • Qrr @175℃(nC):

      1662

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG60N65MFW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      60

    • PD @25℃(W):

      454

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.7

    • VCE(sat)@175℃(V):

      2.3

    • Eoff @25℃(mJ):

      0.9

    • Eoff @175℃(mJ):

      1.25

    • VF @25℃(V):

      2

    • VF @175℃(V):

      1.6

    • Qrr @25℃(nC):

      321

    • Qrr @175℃(nC):

      1662

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG75N65HFW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      75

    • PD @25℃(W):

      600

    • VGE(V):

      ±20

    • VGEth(V):

      4.3

    • VCE(sat)@25℃ Typ.(V):

      1.5

    • VCE(sat)@175℃(V):

      2

    • Eoff @25℃(mJ):

      1.2

    • Eoff @175℃(mJ):

      1.35

    • VF @25℃(V):

      1.85

    • VF @175℃(V):

      1.6

    • Qrr @25℃(nC):

      910

    • Qrr @175℃(nC):

      3600

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG30N65HA1
    • Package:

      TO220

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      312

    • VGE(V):

      ±20

    • VGEth(V):

      5.4

    • VCE(sat)@25℃ Typ.(V):

      1.55

    • VCE(sat)@175℃(V):

      2.05

    • Eoff @25℃(mJ):

      0.3

    • Eoff @175℃(mJ):

      0.45

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      1.45

    • Qrr @25℃(nC):

      148

    • Qrr @175℃(nC):

      508

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG75N65MFW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      75

    • PD @25℃(W):

      600

    • VGE(V):

      ±20

    • VGEth(V):

      4.8

    • VCE(sat)@25℃ Typ.(V):

      1.5

    • VCE(sat)@175℃(V):

      1.85

    • Eoff @25℃(mJ):

      1.4

    • Eoff @175℃(mJ):

      1.85

    • VF @25℃(V):

      1.85

    • VF @175℃(V):

      1.6

    • Qrr @25℃(nC):

      871

    • Qrr @175℃(nC):

      3600

    • SCWT(uS):

      5

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

  • WG50N65LFW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      50

    • PD @25℃(W):

      454

    • VGE(V):

      ±20

    • VGEth(V):

      5

    • VCE(sat)@25℃ Typ.(V):

      1.3

    • VCE(sat)@175℃(V):

      1.5

    • Eoff @25℃(mJ):

      1.12

    • Eoff @175℃(mJ):

      1.56

    • VF @25℃(V):

      2

    • VF @175℃(V):

      1.6

    • Qrr @25℃(nC):

      321

    • Qrr @175℃(nC):

      1622

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    WG50N65LFW1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO247 package to provide extremely low VCE(sat), and minimal switching performance. This device is ideal for low switching frequency power conversion applications.

  • WG75N65UFW1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      650

    • Ic @100℃(A):

      75

    • PD @25℃(W):

      600

    • VGE(V):

      ±20

    • VGEth(V):

      4.2

    • VCE(sat)@25℃ Typ.(V):

      1.4

    • VCE(sat)@175℃(V):

      1.75

    • Eoff @25℃(mJ):

      1.25

    • Eoff @175℃(mJ):

      1.55

    • VF @25℃(V):

      1.85

    • VF @175℃(V):

      1.6

    • Qrr @25℃(nC):

      910

    • Qrr @175℃(nC):

      3600

    • SCWT(uS):

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

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