WG30N65HFB1

650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

Parametric

  • Package

    TO263

  • Technology

    Trench Field-stop

  • Build-in Diode

    Yes

  • Voltage class(V)

    650

  • Ic @100℃(A)

    30

  • PD @25℃(W)

    312

  • VGE(V)

    ±20

  • VGEth(V)

    5.4

  • VCE(sat)@25℃ Typ.(V)

    1.55

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
WG30N65HFB1 9340 740 87118 WG30N65HFB1J TO263 Reel 13 Volume production RoHS compliant, Pb-Free lead plating, RHF H MSL1 Chemical-WG30N65HFB1 Chinese_RoHS_2.pdf

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