WNSC2M35170RH

Silicon Carbide MOSFET in a HTO247-4L plastic package, designed for high frequency, high efficiency systems.

Silicon Carbide MOSFET in a HTO247-4L plastic package, designed for high frequency, high efficiency systems.

Parametric

  • Package

    HTO247-4L

  • Product Status

    New Product

  • Configuration

    Single

  • VDS(V)

    1700

  • RDS(ON)@15Vgs (mΩ)

    35

  • RDS(ON)@18Vgs (mΩ)

    30

  • Vth(typ) (V)

    2.6

  • ID(A)

    82

  • Qg(nC)

    176

Related applications

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
WNSC2M35170RH 9340 742 36127 WNSC2M35170RH6Q HTO247-4L STANDARD MARKING * HORIZONTAL, RAIL PACK Volume production RoHS compliant, Pb-Free lead plating, RHF D NA NA WNSC2M35170RH_Chemical WNSC2M35170RH_RoHS

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