WNSC2M20120R

Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

Parametric

  • Package

    TO247-4L

  • Product Status

    Active

  • Configuration

    Single

  • VDS(V)

    1200

  • RDS(ON)@15Vgs (mΩ)

    20

  • RDS(ON)@18Vgs (mΩ)

    16.3

  • Vth(typ) (V)

    2.6

  • ID(A)

    158.6

  • Qg(nC)

    215

Related applications

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
WNSC2M20120R 9340 733 72127 WNSC2M20120R6Q TO247-4L STANDARD MARKING * HORIZONTAL, RAIL PACK Volume production RoHS compliant, Pb-Free lead plating, RHF D Always Pb-free NA Chemical-WNSC2M20120R Chinese_RoHS_4.pdf

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