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WMS30N085E

WMS30N085E is a high performance logic level N-channel MOSFET in PDFN3.3X3.3 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications.

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Data sheet

WMS30N085E is a high performance logic level N-channel MOSFET in PDFN3.3X3.3 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications.

Parametric

  • Package Name

    PDFN3.3X3.3

  • Product Status

    Production

  • Polarity

    N

  • VDS(V)

    30

  • Vthtyp(V)

    1.5

  • ID(A) @ 25℃

    40

  • RDS (on) @10V max (mΩ)

    8.5

  • RDS (on) @4.5V max (mΩ)

    15

  • QG @10V typ(nC)

    26

Related applications

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
WMS30N085E 9340 734 27118 WMS30N085EJ PDFN3.3X3.3 REEL 7\ Volume production RoHS compliant, Pb-Free lead plating, RHF D Always Pb-free MSL1 Chemical-WMS30N085E Chinese_RoHS_1.pdf

Relevant documents

  • Documentation

Name

Language

Date

Second-Generation Superjunction MOSFET, Beginning of a New Era

English

2025/04/19

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