WSJ2T65R023DW

WSJ2T65R023DW is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

WSJ2T65R023DW is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

Parametric

  • Package Name

    TO247

  • Product Status

    New Product

  • Features

    with FRD

  • VDS(V)

    650

  • Vth typ(V)

    4

  • ID(A) @ 25℃

    100

  • RDS (on) @10V max (mΩ)

    23

  • QG @10V typ(nC)

    178

  • Operation Temperature(℃)

    -55℃~150℃

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
WSJ2T65R023DW 9340 745 57127 WSJ2T65R023DWQ TO247 HORIZONTAL, RAIL PACK New Product RoHS compliant, Pb-Free lead plating, RHF D Always Pb-free NA Chemical-WSJ2T65R023DW WSJ2T65R023DW_rohs

Relevant documents

  • Documentation

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