WSJ2T65R099D

WSJ2T65R099D is a high voltage N-channel MOSFET in TO220 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

WSJ2T65R099D is a high voltage N-channel MOSFET in TO220 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

Parametric

  • Package Name

    TO220

  • Product Status

    Production

  • Features

  • VDS(V)

    650

  • Vth typ(V)

    3.5

  • ID(A) @ 25℃

    31

  • RDS (on) @10V max (mΩ)

    99

  • QG @10V typ(nC)

    59

  • Operation Temperature(℃)

    -55℃~150℃

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
WSJ2T65R099D 9340 747 39127 WSJ2T65R099DQ TO220 HORIZONTAL, RAIL PACK New Product RoHS compliant, Pb-Free lead plating, RHF H Chemical-WSJ2T65R099D WSJ2T65R099D_RoHS

Relevant documents

  • Documentation

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