WSJT65R028DR

WSJT65R028DR is a high voltage N-channel MOSFET in TO247-4L package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

WSJT65R028DR is a high voltage N-channel MOSFET in TO247-4L package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

Parametric

  • Package Name

    TO247-4L

  • Product Status

    New Product

  • Features

    with FRD

  • VDS(V)

    650

  • Vth typ(V)

    4

  • ID(A) @ 25℃

    80

  • RDS (on) @10V max (mΩ)

    28

  • QG @10V typ(nC)

    142

  • Operation Temperature(℃)

    -55℃~150℃

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
WSJT65R028DR 9340 747 61127 WSJT65R028DRQ TO247-4L HORIZONTAL, RAIL PACK New Product RoHS compliant, Pb-Free lead plating, RHF H NA NA Chemical-WSJT65R028DR WSJT65R028DR_rohs

Relevant documents

  • Documentation

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