WSJT60R028DW

WSJT60R028DW is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

WSJT60R028DW is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

Parametric

  • Package Name

    TO247

  • Product Status

    Production

  • Features

    with FRD

  • VDS(V)

    600

  • Vth typ(V)

    4

  • ID(A) @ 25℃

    80

  • RDS (on) @10V max (mΩ)

    28

  • QG @10V typ(nC)

    142

  • Operation Temperature(℃)

    -55℃~150℃

Related applications

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
WSJT60R028DW 9340 742 02127 WSJT60R028DWQ TO247 HORIZONTAL, RAIL PACK Volume production RoHS compliant, Pb-Free lead plating, RHF D Always Pb-free Chemical-WSJT60R028DW Chinese_RoHS_1.pdf

Relevant documents

  • Documentation

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