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WSJM65R600U

WSJM65R600U is a high voltage N-channel MOSFET in TO251 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

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Data sheet

WSJM65R600U is a high voltage N-channel MOSFET in TO251 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

Parametric

  • Package Name

    TO251

  • Product Status

    Production

  • Features

  • VDS(V)

    650

  • Vth typ(V)

    3.5

  • ID(A) @ 25℃

    7.3

  • RDS (on) @10V max (mΩ)

    600

  • QG @10V typ(nC)

    12

  • Operation Temperature(℃)

    -55℃~150℃

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
WSJM65R600U 9340 741 12127 WSJM65R600UQ TO251 HORIZONTAL, RAIL PACK Volume production RoHS compliant, Pb-Free lead plating, RHF H Chemical-WSJM65R600U Chinese_RoHS_2.pdf

Relevant documents

  • Documentation

Name

Language

Date

Second-Generation Superjunction MOSFET, Beginning of a New Era

English

2025/04/19

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