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WNSC5D10650W-A

Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency switching mode power supplies.

Sample request
Data sheet

Parametric

  • Package

    TO247-2L

  • Product Status

    Active

  • Configuration

    Single

  • VRRM(max) (V)

    650

  • VF(typ) (V)

    1.45

  • Qr(nC)

    14.5

  • IF@VF(typ)(A)

    10

  • IFSM(max) (A)

    50

  • IR(μA)

    0.5

Related applications

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
WNSC5D10650W-A 9340 733 34127 WNSC5D10650W-A6Q TO247-2L STANDARD MARKING * HORIZONTAL, RAIL PACK Volume production RoHS compliant, Pb-Free lead plating, RHF H NA NA

Relevant documents

  • Documentation

Name

Language

Date

Sixth-generation high-frequency Schottky SiC diode_0

English

2025/04/19

SiC Modules for Industry

English

2025/04/19

高性能高可靠性 SiC MOSFET的关键设计与优化

Chinese

2025/04/19

WAN015 SiC MOSFET dynamic performance

Chinese

2025/04/19

Design and Optimization of Silicon Carbide Schottky Diode_2

English

2025/04/19

WAN012_120W PD Charger Reference Design

English

2025/04/19

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