WG50N65DHJ

650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

Parametric

  • Package

    TO3PF

  • Technology

    Trench Field-stop

  • Build-in Diode

    Yes

  • Voltage class(V)

    650

  • Ic @100℃(A)

    50

  • PD @25℃(W)

    278

  • VGE(V)

    ±20

  • VGEth(V)

    5

  • VCE(sat)@25℃ Typ.(V)

    1.65

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
WG50N65DHJ 9340 728 44127 WG50N65DHJQ TO3PF HORIZONTAL, RAIL PACK Not For New Design RoHS compliant, Pb-Free lead plating, RHF H NA Chemical-WG50N65DHJ Chinese_RoHS_2.pdf

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