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WG50N65DHJ

650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

Parametric

  • Package

    TO3PF

  • Technology

    Trench Field-stop

  • Build-in Diode

    Yes

  • Voltage class(V)

    650

  • Ic @100℃(A)

    50

  • PD @25℃(W)

    278

  • VGE(V)

    ±20

  • VGEth(V)

    5

  • VCE(sat)@25℃ Typ.(V)

    1.65

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
WG50N65DHJ 9340 728 44127 WG50N65DHJQ TO3PF HORIZONTAL, RAIL PACK Not For New Design RoHS compliant, Pb-Free lead plating, RHF H NA Chinese_RoHS_2.pdf

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