WeEn Strengthens SST Leadership with WMSC Family of 1200-2300 V SiC Power Modules

News | 2026-07-20

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WeEn Strengthens SST Leadership with WMSC Family of 1200-2300 V SiC Power Modules

 

WeEn Strengthens SST Leadership with WMSC Family of 1200-2300 V SiC Power Modules

 

Offers Enhanced Efficiency, Reliability and Flexibility for PFC and DC-DC SSTs applications

 

July 20, 2026, Shanghai, China WeEn Semiconductors, specialists in developing and manufacturing advanced bipolar power semiconductor products, has launched a new family of cutting-edge AC-DC and DC-DC SiC power modules to target the growing range of solid-state transformer (SST) applications, as well as EV super chargers and smart-grid/renewable applications. 

 

SSTs offer conversion efficiencies in the region of 98%, and over 20 high-efficiency, high-reliability modules have been developed at time of launch. These are available in an array of packages and with voltages ranging from 1200 to 2300 V, RDS(on) values as low as 1.5 mΩ and customer-specific configurations can also be created.

 

Module configurations have been created to cater for a huge array of SST applications, including grid PFC for the latest generation of AI racks, enabling conversion from 35 kVAC to 800 VDC in a single stage. supply the. This includes 3-level topology modules for enhanced EMI performance (e.g. WMSC5R0N17B3T), and 2-level devices, for easier control and smaller footprints (e.g. WMSC5R0F23B3T).

 

Similarly, a wide range of half bridge modules for LLC/DAB primary and secondary applications have also been announced with packaging options that include B2, B3 and 62 mm screw mount housing.

 

All modules in the family offer low inductance and have been developed with both design flexibility and layout simplicity in mind. They feature a pin order that both leaves space for the gate driving circuit while also considering device integration and electrical safety.

 

A range of options for the modules is also available, including for the direct bonded copper, case, and silicon-gel material, as well as the mount, pin type, plating and thermal-interface material pre-application service. These are available via the company’s collaborative custom design team.

 

Kevin Shen, President of WeEn Semiconductors, said: “We’ve launched the new WMSC modules cover roughly 90% of all SST applications and these are also ideally suited to the smart grid, renewables and other high-voltage systems. They are a significant breakthrough for the industry and offer higher switching speeds and higher breakdown voltages, which in turn allows for direct connection to the medium-voltage grid as well as reduced magnetics, higher efficiencies and simplified cooling.”

 

All modules are available for sampling and in production quantities. For further information on these modules, as well as on WeEn’s high-voltage (up to 2300 V) SiC power ICs and its collaborative custom design offering, please visit ween-semi.com. 

 

Device

Breakdown Voltage

RDS(on)

Application

INPC modules   include

WMSC5R0N17B3T

1700 V

5.0 mΩ


Multi-purpose half-bridge B3 modules include

WMSC5R0HS23B3T

2300 V


AC side

WMSC5R0F23B3T

2300 V


AC side, LLC/DAB Primary

WMSC3R0F15B3T

1500 V


LLC/DAB Primary

WMSC3R0F12B3T

1200 V


LLC/DAB Secondary

WMSC2R4F12B3T  

1200 V


LLC/DAB Secondary

Half-bridge B2   Modules include

WMSC4R0H23B2N

2300 V

4.0 mΩ

LLC/DAB Secondary

WMSC4R8H23B2N-D

2300 V

4.8 mΩ

LLC/DAB Secondary

WMSC6R0H12B2N-D

2300 V

6.0 mΩ

LLC/DAB Secondary

Half-bridge 62 mm   module (screw mount) include

WMSC2R7H23T2

2300 V

2.7 mΩ

AC side

WMSC2R7H17T2N-D

1700 V

2.7 mΩ

LLC/DAB Primary

WMSC7R5H17T2N-D

1700 V

7.5 mΩ

LLC/DAB Secondary

WMSC1R9H12T2

1200 V

1.9 mΩ

LLC/DAB Secondary

WMSC1R9H12T2N

1200 V

1.9 mΩ

LLC/DAB Secondary

High-power   half-bridge modules (PCB mount) include

WMSC1R5H12B3S

1200 V

1.5 mΩ

LLC/DAB Secondary

WMSC2R3H12B3S

1200 V

2.3 mΩ

LLC/DAB Secondary

WMSC4R0H12B2S

1200 V

4.0 mΩ

LLC/DAB Secondary

WMSC4R0H12B2S-D

1200 V

4.0 mΩ

LLC/DAB Secondary

WMSC4R0H12B2T-D

1200 V

4.0 mΩ

LLC/DAB Secondary

 

 

About WeEn Semiconductors

WeEn Semiconductors is a global joint venture company formed by NXP Semiconductors and Beijing JianGuang Asset Management Co. Ltd. (JAC Capital) in 2015. As a key player in the semiconductors industry, WeEn combines the advanced bipolar power technology and the strong resource of JAC Capital in Chinese manufacturing industry and distribution channels, to focus on developing a complete portfolio of industry-leading bipolar power products including silicon controlled rectifiers, power diodes, high voltage transistors, silicon carbide which are widely used in the automotive, telecommunications, computers and consumer electronics, intelligent home appliances, lighting, and power management markets. The aim is to help the customers achieve higher cost-efficiency and production efficiency and to contribute to the development of China and global intelligent manufacturing. Find out more at http://www.ween-semi.com/en.

 

Media Contact:
WeEn Semiconductors
Email: marcom@ween-semi.com


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