WeEn Semiconductors Releases Enhanced Thermal Performance Package Technology for SiC MOSFETs and Diodes

TSPAK devices with top-side cooling enable higher efficiency, increased power density, reduced EMI and extended reliability in automotive, renewable energy and high-power server applications   

WeEn Semiconductors, specialists in developing and manufacturing advanced bipolar power semiconductor products, showcases its silicon carbide (SiC) MOSFETs and Schottky Barrier Diodes (SBDs) in highly thermally efficient TSPAK packages recently. The new packages will enable engineers to improve efficiency, reduce form factors, extend reliability and lower EMI across a variety of high-power applications.

Providing effective heat dissipation from a thermal pad on the surface of the SiC device rather than via a PCB substrate, the company’s top-side cooling TSPAK technologies can reduce J-A (junction-to-ambient) thermal resistance by up to 16% compared to conventional devices. As a result, the packages help to simplify thermal management design, lower losses and increase power density.

By minimizing or eliminating the need for complex PCB cooling, TSPAK devices reduce component count and drive down system costs. In addition, the ability to support a greater number of power cycle extends reliability, while reduced EMI helps engineers to simplify system EMC compliance. EMI reduction derives from the fact that the circulating current that creates the magnetic field is no longer blocked by the thermal vias necessary in conventional bottom-side cooling designs and can return to the source directly, minimizing magnetic interference.  

WeEn’s TSPAK SiC technologies are ideally suited to on-board chargers and high-voltage-to-low-voltage DC-DC converters in electric vehicles (EVs), automotive HVAC compressors, vehicle charging stations, photovoltaic (PV) renewable energy systems and power supplies for computing and telecom servers. TSPAK MOSFETs offer voltage ratings from 650 V to 1700 V and on resistance (RDS(ON)) ratings from 20 to 150mΩ. TSPAK SBDs are available with voltages from 650 V to 1200 V and current ratings of 10 A to 40 A.

All products are available in industrial grade and automotive grade variants.

For more information, please explore WeEn Semiconductors’ product portfolio here.

About WeEn Semiconductors

WeEn Semiconductors is a global joint venture company formed by NXP Semiconductors and Beijing JianGuang Asset Management Co. Ltd. (JAC Capital) in 2015. As a key player in the semiconductors industry, WeEn combines the advanced bipolar power technology and the strong resource of JAC Capital in Chinese manufacturing industry and distribution channels, to focus on developing a complete portfolio of industry-leading bipolar power products including silicon controlled rectifiers, power diodes, high voltage transistors, silicon carbide which are widely used in the automotive, telecommunications, computers and consumer electronics, intelligent home appliances, lighting, and power management markets. The aim is to help the customers achieve higher cost-efficiency and production efficiency and to contribute to the development of China and global intelligent manufacturing. Find out more at https://www.ween-semi.com/en.

Media Contact:
WeEn Semiconductors
Email: marcom@ween-semi.com