Contact Us

CN

W3MS150N110V

W3MS150N110V is a medium voltage N-channel MOSFET in PDFN5X6 package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

Sample request
Data sheet

W3MS150N110V is a medium voltage N-channel MOSFET in PDFN5X6 package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

Parametric

  • Package Name

    PDFN5X6

  • Product Status

    New Product

  • Polarity

    N

  • VDS(V)

    150

  • Vthtyp(V)

    3

  • ID(A) @ 25℃

    78

  • RDS (on) @10V max (mΩ)

    10.5

  • RDS (on) @4.5V max (mΩ)

    -

  • QG @10V typ(nC)

    47

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
W3MS150N110V 9340 751 59118 W3MS150N110VJ PDFN5X6 REEL 13\" Q1/T1 New Product RoHS compliant, Pb-Free lead plating, RHF H NA MSL3 Chemical-W3MS150N110V W3MS150N110V_rohs

Relevant documents

  • Documentation

Name

Language

Date

Second-Generation Superjunction MOSFET, Beginning of a New Era

English

2025/04/19

Looking for Something else?

Please fill in the following to download the information

  • I have read and agree to the WeEn SemiconductorsPrivacy Policy.
  • Submit