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WSJ2M60R065DB

WSJ2M60R065DB is a high voltage N-channel MOSFET in TO263 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

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Data sheet

Parametric

  • Package Name

    TO263

  • Product Status

    New Product

  • Features

    with FRD

  • VDS(V)

    600

  • Vth typ(V)

    4

  • ID(A) @ 25℃

    42

  • RDS (on) @10V max (mΩ)

    65

  • QG @10V typ(nC)

    82

  • Operation Temperature(℃)

    -55℃~150℃

Related applications

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
WSJ2M60R065DB 9340 744 95118 WSJ2M60R065DBJ TO263 REEL 13\" Q1/T1 New Product RoHS compliant, Pb-Free lead plating, RHF H MSL1

Relevant documents

  • Documentation

Name

Language

Date

Second-Generation Superjunction MOSFET, Beginning of a New Era

English

2025/04/19

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