WSJM65R170B

WSJM65R170B is a high voltage N-channel MOSFET in TO263 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

WSJM65R170B is a high voltage N-channel MOSFET in TO263 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

Parametric

  • Package Name

    TO263

  • Product Status

    Production

  • Features

  • VDS(V)

    650

  • Vth typ(V)

    3.5

  • ID(A) @ 25℃

    23

  • RDS (on) @10V max (mΩ)

    170

  • QG @10V typ(nC)

    38

  • Operation Temperature(℃)

    -55℃~150℃

Related applications

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
WSJM65R170B 9340 739 26118 WSJM65R170B TO263 REEL 13\ Volume production RoHS compliant, Pb-Free lead plating, RHF H MSL1 Chemical-WSJM65R170B Chinese_RoHS_2.pdf

Relevant documents

  • Documentation

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