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WMG50T12B2S

IGBT module integrates inhouse IGBT chips, FRD chips as well as silicon carbid chips which can offer the best class electrical performance as well product reliability. The modules are ease to use and can help to significantly reduce the power losses and improve the power system efficiency.

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IGBT module integrates inhouse IGBT chips, FRD chips as well as silicon carbid chips which can offer the best class electrical performance as well product reliability. The modules are ease to use and can help to significantly reduce the power losses and improve the power system efficiency.

Parametric

  • Housing

    WeEnPack B2

  • Configuration

    3L-TNPC

  • Description

    high efficiency and ease to use

  • Voltage class(V)

    1200

  • Icmax(A)

    50

  • Isolation Material

    Al2O3

  • Features

    IGBT+FRD

  • Other features

    solder pin

  • Tj(max)(℃)

    150

Related applications

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
WMG50T12B2S 9340 743 94300 WMG50T12B2ST WeEnPack B2 TRAY PACK,EPE OR BLISTER Volume production RoHS compliant, Pb-Free lead plating, RHF H NA

Relevant documents

  • Documentation

Name

Language

Date

Continuous Release of IGBT Vitality, In-depth Discussion on Key Induction Heating Technologies

English

2025/04/19

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