联系我们

EN
download-159.jpg download-343.jpg

中压MOSFET

产品中心
显示过滤器
隐藏过滤器
重置

显示 13 个产品

  • Package Name
    • PDFN5X6
    • TO220
    • TO220F
    • TO247
    • TO263
    • TOLL
    重置筛选器
  • Product Status
    • New Product
    重置筛选器
  • Polarity
    • N
    重置筛选器
  • VDS(V)
    • 60
    • 80
    • 100
    • 150
    • 200
    重置筛选器
  • Vthtyp(V)
    • 2.8
    • 3
    重置筛选器
  • ID(A) @ 25℃
    • 78
    • 84
    • 120
    • 175
    • 215
    • 240
    • 245
    • 295
    • 300
    • 390
    • 400
    重置筛选器
  • RDS (on) @10V max (mΩ)
    • 1
    • 1.1
    • 1.3
    • 1.6
    • 1.9
    • 2.2
    • 2.5
    • 2.6
    • 10.5
    • 11
    重置筛选器
  • RDS (on) @4.5V max (mΩ)
    • -
    重置筛选器
  • QG @10V typ(nC)
    • 47
    • 67
    • 94
    • 103
    • 107
    • 113
    • 123
    • 140
    • 181
    重置筛选器
  • Operation Temperature(℃)
    • -55~150℃
    • -55~175℃
    重置筛选器
  • Qualification
    • Industrial
    重置筛选器
  • Type Name
  • 比较
    显示全部
  • Package Name
    • PDFN5X6
    • TO220
    • TO220F
    • TO247
    • TO263
    • TOLL

    重置筛选器

  • Product Status
    • New Product

    重置筛选器

  • Polarity
    • N

    重置筛选器

  • VDS(V)
    • 60
    • 80
    • 100
    • 150
    • 200

    重置筛选器

  • Vthtyp(V)
    • 2.8
    • 3

    重置筛选器

  • ID(A) @ 25℃
    • 78
    • 84
    • 120
    • 175
    • 215
    • 240
    • 245
    • 295
    • 300
    • 390
    • 400

    重置筛选器

  • RDS (on) @10V max (mΩ)
    • 1
    • 1.1
    • 1.3
    • 1.6
    • 1.9
    • 2.2
    • 2.5
    • 2.6
    • 10.5
    • 11

    重置筛选器

  • RDS (on) @4.5V max (mΩ)
    • -

    重置筛选器

  • QG @10V typ(nC)
    • 47
    • 67
    • 94
    • 103
    • 107
    • 113
    • 123
    • 140
    • 181

    重置筛选器

  • Operation Temperature(℃)
    • -55~150℃
    • -55~175℃

    重置筛选器

  • Qualification
    • Industrial

    重置筛选器

  • TO220

    New Product

    N

    100

    3

    240

    2.6

    -

    107

    -55~150℃

    Industrial

  • TO263

    New Product

    N

    100

    3

    245

    2.5

    -

    107

    -55~150℃

    Industrial

  • TO220

    New Product

    N

    150

    3

    84

    10.5

    -

    47

    -55~150℃

    Industrial

  • PDFN5X6

    New Product

    N

    80

    2.8

    175

    2.2

    -

    113

    -55~150℃

    Industrial

  • TO247

    New Product

    N

    100

    3

    245

    2.5

    -

    107

    -55~150℃

    Industrial

  • PDFN5X6

    New Product

    N

    150

    3

    78

    10.5

    -

    47

    -55~150℃

    Industrial

  • TO220

    New Product

    N

    200

    3

    120

    11

    -

    67

    -55~175℃

    Industrial

  • PDFN5X6

    New Product

    N

    60

    3

    300

    1.1

    -

    123

    -55~175℃

    Industrial

  • TOLL

    New Product

    N

    80

    2.8

    400

    1

    -

    181

    -55~150℃

    Industrial

  • TO220F

    New Product

    N

    150

    3

    84

    10.5

    -

    47

    -55~150℃

    Industrial

  • PDFN5X6

    New Product

    N

    60

    3

    215

    1.6

    -

    94

    -55~150℃

    Industrial

  • TOLL

    New Product

    N

    100

    3

    390

    1.3

    -

    140

    -55~175℃

    Industrial

  • TOLL

    New Product

    N

    100

    3

    295

    1.9

    -

    103

    -55~150℃

    Industrial

  • W3MS100N026
    • Package Name:

      TO220

    • Product Status:

      New Product

    • Polarity:

      N

    • VDS(V):

      100

    • Vthtyp(V):

      3

    • ID(A) @ 25℃:

      240

    • RDS (on) @10V max (mΩ):

      2.6

    • RDS (on) @4.5V max (mΩ):

      -

    • QG @10V typ(nC):

      107

    • Operation Temperature(℃):

      -55~150℃

    • Qualification:

      Industrial

    W3MS100N026 is a medium voltage N-channel MOSFET in TO220 package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • W3MS100N025B
    • Package Name:

      TO263

    • Product Status:

      New Product

    • Polarity:

      N

    • VDS(V):

      100

    • Vthtyp(V):

      3

    • ID(A) @ 25℃:

      245

    • RDS (on) @10V max (mΩ):

      2.5

    • RDS (on) @4.5V max (mΩ):

      -

    • QG @10V typ(nC):

      107

    • Operation Temperature(℃):

      -55~150℃

    • Qualification:

      Industrial

    W3MS100N025B is a medium voltage N-channel MOSFET in TO263 package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • W3MS150N110
    • Package Name:

      TO220

    • Product Status:

      New Product

    • Polarity:

      N

    • VDS(V):

      150

    • Vthtyp(V):

      3

    • ID(A) @ 25℃:

      84

    • RDS (on) @10V max (mΩ):

      10.5

    • RDS (on) @4.5V max (mΩ):

      -

    • QG @10V typ(nC):

      47

    • Operation Temperature(℃):

      -55~150℃

    • Qualification:

      Industrial

    W3MS150N110 is a medium voltage N-channel MOSFET in TO220 package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • W3MS80N022V
    • Package Name:

      PDFN5X6

    • Product Status:

      New Product

    • Polarity:

      N

    • VDS(V):

      80

    • Vthtyp(V):

      2.8

    • ID(A) @ 25℃:

      175

    • RDS (on) @10V max (mΩ):

      2.2

    • RDS (on) @4.5V max (mΩ):

      -

    • QG @10V typ(nC):

      113

    • Operation Temperature(℃):

      -55~150℃

    • Qualification:

      Industrial

    W3MS80N022V is a mid voltage N-channel MOSFET in PDFN5*6 package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • W3MS100N025W
    • Package Name:

      TO247

    • Product Status:

      New Product

    • Polarity:

      N

    • VDS(V):

      100

    • Vthtyp(V):

      3

    • ID(A) @ 25℃:

      245

    • RDS (on) @10V max (mΩ):

      2.5

    • RDS (on) @4.5V max (mΩ):

      -

    • QG @10V typ(nC):

      107

    • Operation Temperature(℃):

      -55~150℃

    • Qualification:

      Industrial

    W3MS100N025W is a medium voltage N-channel MOSFET in TO247 package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • W3MS150N110V
    • Package Name:

      PDFN5X6

    • Product Status:

      New Product

    • Polarity:

      N

    • VDS(V):

      150

    • Vthtyp(V):

      3

    • ID(A) @ 25℃:

      78

    • RDS (on) @10V max (mΩ):

      10.5

    • RDS (on) @4.5V max (mΩ):

      -

    • QG @10V typ(nC):

      47

    • Operation Temperature(℃):

      -55~150℃

    • Qualification:

      Industrial

    W3MS150N110V is a medium voltage N-channel MOSFET in PDFN5X6 package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • W3MS200N110
    • Package Name:

      TO220

    • Product Status:

      New Product

    • Polarity:

      N

    • VDS(V):

      200

    • Vthtyp(V):

      3

    • ID(A) @ 25℃:

      120

    • RDS (on) @10V max (mΩ):

      11

    • RDS (on) @4.5V max (mΩ):

      -

    • QG @10V typ(nC):

      67

    • Operation Temperature(℃):

      -55~175℃

    • Qualification:

      Industrial

    W3MS200N110 is a medium voltage N-channel MOSFET in TO220 package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • W3MS60N010V
    • Package Name:

      PDFN5X6

    • Product Status:

      New Product

    • Polarity:

      N

    • VDS(V):

      60

    • Vthtyp(V):

      3

    • ID(A) @ 25℃:

      300

    • RDS (on) @10V max (mΩ):

      1.1

    • RDS (on) @4.5V max (mΩ):

      -

    • QG @10V typ(nC):

      123

    • Operation Temperature(℃):

      -55~175℃

    • Qualification:

      Industrial

    W3MS60N016V is a mid voltage N-channel MOSFET in PDFN5*6 package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • W3MS80N010TL
    • Package Name:

      TOLL

    • Product Status:

      New Product

    • Polarity:

      N

    • VDS(V):

      80

    • Vthtyp(V):

      2.8

    • ID(A) @ 25℃:

      400

    • RDS (on) @10V max (mΩ):

      1

    • RDS (on) @4.5V max (mΩ):

      -

    • QG @10V typ(nC):

      181

    • Operation Temperature(℃):

      -55~150℃

    • Qualification:

      Industrial

    W3MS80N010TL is a low voltage N-channel MOSFET in TOLL package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • W3MS150N110X
    • Package Name:

      TO220F

    • Product Status:

      New Product

    • Polarity:

      N

    • VDS(V):

      150

    • Vthtyp(V):

      3

    • ID(A) @ 25℃:

      84

    • RDS (on) @10V max (mΩ):

      10.5

    • RDS (on) @4.5V max (mΩ):

      -

    • QG @10V typ(nC):

      47

    • Operation Temperature(℃):

      -55~150℃

    • Qualification:

      Industrial

    W3MS150N110X is a medium voltage N-channel MOSFET in TO220F package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • W3MS60N016V
    • Package Name:

      PDFN5X6

    • Product Status:

      New Product

    • Polarity:

      N

    • VDS(V):

      60

    • Vthtyp(V):

      3

    • ID(A) @ 25℃:

      215

    • RDS (on) @10V max (mΩ):

      1.6

    • RDS (on) @4.5V max (mΩ):

      -

    • QG @10V typ(nC):

      94

    • Operation Temperature(℃):

      -55~150℃

    • Qualification:

      Industrial

    W3MS60N016V is a mid voltage N-channel MOSFET in PDFN5*6 package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • W3MS100N013TL
    • Package Name:

      TOLL

    • Product Status:

      New Product

    • Polarity:

      N

    • VDS(V):

      100

    • Vthtyp(V):

      3

    • ID(A) @ 25℃:

      390

    • RDS (on) @10V max (mΩ):

      1.3

    • RDS (on) @4.5V max (mΩ):

      -

    • QG @10V typ(nC):

      140

    • Operation Temperature(℃):

      -55~175℃

    • Qualification:

      Industrial

    W3MS100N013TL is a low voltage N-channel MOSFET in TOLL package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • W3MS100N019TL
    • Package Name:

      TOLL

    • Product Status:

      New Product

    • Polarity:

      N

    • VDS(V):

      100

    • Vthtyp(V):

      3

    • ID(A) @ 25℃:

      295

    • RDS (on) @10V max (mΩ):

      1.9

    • RDS (on) @4.5V max (mΩ):

      -

    • QG @10V typ(nC):

      103

    • Operation Temperature(℃):

      -55~150℃

    • Qualification:

      Industrial

    W3MS100N019TL is a mid voltage N-channel MOSFET in TOLL package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

您还在寻找其他东西吗？