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W3MS200N110

W3MS200N110 is a medium voltage N-channel MOSFET in TO220 package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

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W3MS200N110 is a medium voltage N-channel MOSFET in TO220 package, which utilizes the split gate technology to provide superior FOM RDS(on) *Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

Parametric

  • Package Name

    TO220

  • Product Status

    New Product

  • Polarity

    N

  • VDS(V)

    200

  • Vthtyp(V)

    3

  • ID(A) @ 25℃

    120

  • RDS (on) @10V max (mΩ)

    11

  • RDS (on) @4.5V max (mΩ)

    -

  • QG @10V typ(nC)

    67

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
W3MS200N110 9340 751 28127 W3MS200N110Q TO220 HORIZONTAL, RAIL PACK New Product RoHS compliant, Pb-Free lead plating, RHF H NA Chemical-W3MS200N110 W3MS200N110_rohs

Relevant documents

  • Documentation

名称

语言

日期

Second-Generation Superjunction MOSFET, Beginning of a New Era

English

2025/04/19

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