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1350V IGBT 单管

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显示 5 个产品

  • Package
    • TO247
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  • Technology
    • Trench Field-stop
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  • Build-in Diode
    • Yes
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  • Voltage class(V)
    • 1100
    • 1350
    • 1400
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  • Ic @100℃(A)
    • 20
    • 25
    • 30
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  • PD @25℃(W)
    • 300
    • 357
    • 428
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  • VGE(V)
    • ±20
    • ±25
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  • VGEth(V)
    • 5.5
    • 5.6
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  • VCE(sat)@25℃ Typ.(V)
    • 1.6
    • 1.7
    • 1.8
    • 1.85
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  • VCE(sat)@175℃(V)
    • 1.95
    • 2.15
    • 2.2
    • 2.45
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  • Eoff @25℃(mJ)
    • 0.042
    • 0.054
    • 0.078
    • 0.129
    • 0.13
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  • Eoff @175℃(mJ)
    • 0.102
    • 0.158
    • 0.167
    • 0.28
    • 0.31
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  • VF @25℃(V)
    • 1.75
    • 1.9
    • 2
    • 2.1
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  • VF @175℃(V)
    • 2
    • 2.2
    • 2.25
    • 2.3
    • 2.45
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  • Qrr @25℃(nC)
    • -
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  • Qrr @175℃(nC)
    • -
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  • SCWT(uS)
    • -
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  • Tj(max)(℃)
    • 175
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  • Qualification
    • Industrial
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  • Type Name
  • 比较
    显示全部
  • Package
    • TO247

    重置筛选器

  • Technology
    • Trench Field-stop

    重置筛选器

  • Build-in Diode
    • Yes

    重置筛选器

  • Voltage class(V)
    • 1100
    • 1350
    • 1400

    重置筛选器

  • Ic @100℃(A)
    • 20
    • 25
    • 30

    重置筛选器

  • PD @25℃(W)
    • 300
    • 357
    • 428

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  • VGE(V)
    • ±20
    • ±25

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  • VGEth(V)
    • 5.5
    • 5.6

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  • VCE(sat)@25℃ Typ.(V)
    • 1.6
    • 1.7
    • 1.8
    • 1.85

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  • VCE(sat)@175℃(V)
    • 1.95
    • 2.15
    • 2.2
    • 2.45

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  • Eoff @25℃(mJ)
    • 0.042
    • 0.054
    • 0.078
    • 0.129
    • 0.13

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  • Eoff @175℃(mJ)
    • 0.102
    • 0.158
    • 0.167
    • 0.28
    • 0.31

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  • VF @25℃(V)
    • 1.75
    • 1.9
    • 2
    • 2.1

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  • VF @175℃(V)
    • 2
    • 2.2
    • 2.25
    • 2.3
    • 2.45

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  • Qrr @25℃(nC)
    • -

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  • Qrr @175℃(nC)
    • -

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  • SCWT(uS)
    • -

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  • Tj(max)(℃)
    • 175

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  • Qualification
    • Industrial

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  • TO247

    Trench Field-stop

    Yes

    1350

    20

    300

    ±20

    5.5

    1.8

    2.2

    0.054

    0.102

    1.9

    2.2

    -

    -

    -

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    1350

    25

    300

    ±25

    5.5

    1.85

    2.45

    0.078

    0.167

    2.1

    2.45

    -

    -

    -

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    1100

    30

    428

    ±25

    5.5

    1.6

    1.95

    0.042

    0.158

    1.75

    2

    -

    -

    -

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    1350

    30

    428

    ±25

    5.5

    1.7

    2.2

    0.129

    0.28

    1.9

    2.3

    -

    -

    -

    175

    Industrial

  • TO247

    Trench Field-stop

    Yes

    1400

    30

    357

    ±20

    5.6

    1.8

    2.15

    0.13

    0.31

    2

    2.25

    -

    -

    -

    175

    Industrial

  • WG20R135W1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      1350

    • Ic @100℃(A):

      20

    • PD @25℃(W):

      300

    • VGE(V):

      ±20

    • VGEth(V):

      5.5

    • VCE(sat)@25℃ Typ.(V):

      1.8

    • VCE(sat)@175℃(V):

      2.2

    • Eoff @25℃(mJ):

      0.054

    • Eoff @175℃(mJ):

      0.102

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      2.2

    • Qrr @25℃(nC):

      -

    • Qrr @175℃(nC):

      -

    • SCWT(uS):

      -

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    This device is Reverse-Conducting IGBT which uses advanced Fine Trench Field-stop technology integrated with monolithic body diode. It represents an optimum compromise between conduction and switching losses to maximize the efficiency for soft commutation.

  • WG25R135W1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      1350

    • Ic @100℃(A):

      25

    • PD @25℃(W):

      300

    • VGE(V):

      ±25

    • VGEth(V):

      5.5

    • VCE(sat)@25℃ Typ.(V):

      1.85

    • VCE(sat)@175℃(V):

      2.45

    • Eoff @25℃(mJ):

      0.078

    • Eoff @175℃(mJ):

      0.167

    • VF @25℃(V):

      2.1

    • VF @175℃(V):

      2.45

    • Qrr @25℃(nC):

      -

    • Qrr @175℃(nC):

      -

    • SCWT(uS):

      -

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    This device is Reverse-Conducting IGBT which uses advanced Fine Trench Field-stop technology integrated with monolithic body diode. It represents an optimum compromise between conduction and switching losses to maximize the efficiency for soft commutation.

  • WG30R110W1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      1100

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      428

    • VGE(V):

      ±25

    • VGEth(V):

      5.5

    • VCE(sat)@25℃ Typ.(V):

      1.6

    • VCE(sat)@175℃(V):

      1.95

    • Eoff @25℃(mJ):

      0.042

    • Eoff @175℃(mJ):

      0.158

    • VF @25℃(V):

      1.75

    • VF @175℃(V):

      2

    • Qrr @25℃(nC):

      -

    • Qrr @175℃(nC):

      -

    • SCWT(uS):

      -

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    This device is Reverse-Conducting IGBT which uses advanced Fine Trench Field-stop technology integrated with monolithic body diode. It represents an optimum compromise between conduction and switching losses to maximize the efficiency for soft commutation.

  • WG30R135W1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      1350

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      428

    • VGE(V):

      ±25

    • VGEth(V):

      5.5

    • VCE(sat)@25℃ Typ.(V):

      1.7

    • VCE(sat)@175℃(V):

      2.2

    • Eoff @25℃(mJ):

      0.129

    • Eoff @175℃(mJ):

      0.28

    • VF @25℃(V):

      1.9

    • VF @175℃(V):

      2.3

    • Qrr @25℃(nC):

      -

    • Qrr @175℃(nC):

      -

    • SCWT(uS):

      -

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    This device is Reverse-Conducting IGBT which uses advanced Fine Trench Field-stop technology integrated with monolithic body diode. It represents an optimum compromise between conduction and switching losses to maximize the efficiency for soft commutation.

  • WG30R140W1
    • Package:

      TO247

    • Technology:

      Trench Field-stop

    • Build-in Diode:

      Yes

    • Voltage class(V):

      1400

    • Ic @100℃(A):

      30

    • PD @25℃(W):

      357

    • VGE(V):

      ±20

    • VGEth(V):

      5.6

    • VCE(sat)@25℃ Typ.(V):

      1.8

    • VCE(sat)@175℃(V):

      2.15

    • Eoff @25℃(mJ):

      0.13

    • Eoff @175℃(mJ):

      0.31

    • VF @25℃(V):

      2

    • VF @175℃(V):

      2.25

    • Qrr @25℃(nC):

      -

    • Qrr @175℃(nC):

      -

    • SCWT(uS):

      -

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    This device is Reverse-Conducting IGBT which uses advanced Fine Trench Field-stop technology integrated with monolithic body diode. It represents an optimum compromise between conduction and switching losses to maximize the efficiency for soft commutation.

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