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高压MOSFET

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显示 40 个产品

  • Package Name
    • IITO220
    • TO220
    • TO220F
    • TO247
    • TO251
    • TO252
    • TO263
    • TOLL
    重置筛选器
  • Product Status
    • New Product
    • Production
    重置筛选器
  • Features
    • with FRD
    重置筛选器
  • VDS(V)
    • 600
    • 650
    • 800
    重置筛选器
  • Vth typ(V)
    • 3.5
    • 4
    重置筛选器
  • ID(A) @ 25℃
    • 7.3
    • 8
    • 10
    • 11
    • 12
    • 13
    • 14
    • 17
    • 21
    • 22
    • 23
    • 25
    • 30
    • 32
    • 42
    • 50
    • 67
    • 80
    重置筛选器
  • RDS (on) @10V max (mΩ)
    • 24
    • 28
    • 44
    • 65
    • 70
    • 99
    • 120
    • 170
    • 200
    • 260
    • 360
    • 600
    重置筛选器
  • QG @10V typ(nC)
    • 12
    • 18
    • 26
    • 38
    • 52
    • 54
    • 57
    • 70
    • 82
    • 122
    • 123
    • 142
    重置筛选器
  • Operation Temperature(℃)
    • -55℃~150℃
    重置筛选器
  • Qualification
    • Industrial
    重置筛选器
  • Type Name
  • 比较
    显示全部
  • Package Name
    • IITO220
    • TO220
    • TO220F
    • TO247
    • TO251
    • TO252
    • TO263
    • TOLL

    重置筛选器

  • Product Status
    • New Product
    • Production

    重置筛选器

  • Features
    • with FRD

    重置筛选器

  • VDS(V)
    • 600
    • 650
    • 800

    重置筛选器

  • Vth typ(V)
    • 3.5
    • 4

    重置筛选器

  • ID(A) @ 25℃
    • 7.3
    • 8
    • 10
    • 11
    • 12
    • 13
    • 14
    • 17
    • 21
    • 22
    • 23
    • 25
    • 30
    • 32
    • 42
    • 50
    • 67
    • 80

    重置筛选器

  • RDS (on) @10V max (mΩ)
    • 24
    • 28
    • 44
    • 65
    • 70
    • 99
    • 120
    • 170
    • 200
    • 260
    • 360
    • 600

    重置筛选器

  • QG @10V typ(nC)
    • 12
    • 18
    • 26
    • 38
    • 52
    • 54
    • 57
    • 70
    • 82
    • 122
    • 123
    • 142

    重置筛选器

  • Operation Temperature(℃)
    • -55℃~150℃

    重置筛选器

  • Qualification
    • Industrial

    重置筛选器

  • TO247

    Production

    with FRD

    650

    4

    67

    44

    123

    -55℃~150℃

    Industrial

  • TO247

    Production

    650

    4

    67

    44

    122

    -55℃~150℃

    Industrial

  • TO220

    Production

    with FRD

    650

    4

    32

    99

    57

    -55℃~150℃

    Industrial

  • TO263

    Production

    with FRD

    650

    4

    32

    99

    57

    -55℃~150℃

    Industrial

  • TOLL

    Production

    with FRD

    650

    4

    25

    99

    57

    -55℃~150℃

    Industrial

  • TO247

    Production

    with FRD

    650

    4

    32

    99

    57

    -55℃~150℃

    Industrial

  • TO220F

    Production

    with FRD

    650

    4

    32

    99

    57

    -55℃~150℃

    Industrial

  • TO220

    Production

    650

    3.5

    30

    120

    54

    -55℃~150℃

    Industrial

  • TO263

    Production

    650

    3.5

    30

    120

    54

    -55℃~150℃

    Industrial

  • TOLL

    Production

    650

    3.5

    23

    120

    54

    -55℃~150℃

    Industrial

  • TO247

    Production

    650

    3.5

    30

    120

    54

    -55℃~150℃

    Industrial

  • TO220F

    Production

    650

    3.5

    30

    120

    54

    -55℃~150℃

    Industrial

  • TO220

    Production

    650

    3.5

    23

    170

    38

    -55℃~150℃

    Industrial

  • TO263

    Production

    650

    3.5

    23

    170

    38

    -55℃~150℃

    Industrial

  • TOLL

    Production

    650

    3.5

    21

    170

    38

    -55℃~150℃

    Industrial

  • TO247

    Production

    650

    3.5

    23

    170

    38

    -55℃~150℃

    Industrial

  • TO220F

    Production

    650

    3.5

    23

    170

    38

    -55℃~150℃

    Industrial

  • IITO220

    Production

    650

    3.5

    13

    170

    38

    -55℃~150℃

    Industrial

  • TO220

    Production

    650

    3.5

    17

    260

    26

    -55℃~150℃

    Industrial

  • TO263

    Production

    650

    3.5

    14

    260

    26

    -55℃~150℃

    Industrial

  • WSJM65R044DW
    • Package Name:

      TO247

    • Product Status:

      Production

    • Features:

      with FRD

    • VDS(V):

      650

    • Vth typ(V):

      4

    • ID(A) @ 25℃:

      67

    • RDS (on) @10V max (mΩ):

      44

    • QG @10V typ(nC):

      123

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R044DW is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJM65R044W
    • Package Name:

      TO247

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      4

    • ID(A) @ 25℃:

      67

    • RDS (on) @10V max (mΩ):

      44

    • QG @10V typ(nC):

      122

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R044W is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJM65R099D
    • Package Name:

      TO220

    • Product Status:

      Production

    • Features:

      with FRD

    • VDS(V):

      650

    • Vth typ(V):

      4

    • ID(A) @ 25℃:

      32

    • RDS (on) @10V max (mΩ):

      99

    • QG @10V typ(nC):

      57

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R099D is a high voltage N-channel MOSFET in TO220 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJM65R099DB
    • Package Name:

      TO263

    • Product Status:

      Production

    • Features:

      with FRD

    • VDS(V):

      650

    • Vth typ(V):

      4

    • ID(A) @ 25℃:

      32

    • RDS (on) @10V max (mΩ):

      99

    • QG @10V typ(nC):

      57

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R099DB is a high voltage N-channel MOSFET in TO263 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJM65R099DTL
    • Package Name:

      TOLL

    • Product Status:

      Production

    • Features:

      with FRD

    • VDS(V):

      650

    • Vth typ(V):

      4

    • ID(A) @ 25℃:

      25

    • RDS (on) @10V max (mΩ):

      99

    • QG @10V typ(nC):

      57

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R099DTL is a high voltage N-channel MOSFET in TOLL package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJM65R099DW
    • Package Name:

      TO247

    • Product Status:

      Production

    • Features:

      with FRD

    • VDS(V):

      650

    • Vth typ(V):

      4

    • ID(A) @ 25℃:

      32

    • RDS (on) @10V max (mΩ):

      99

    • QG @10V typ(nC):

      57

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R099DW is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJM65R099DX
    • Package Name:

      TO220F

    • Product Status:

      Production

    • Features:

      with FRD

    • VDS(V):

      650

    • Vth typ(V):

      4

    • ID(A) @ 25℃:

      32

    • RDS (on) @10V max (mΩ):

      99

    • QG @10V typ(nC):

      57

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R099DX is a high voltage N-channel MOSFET in TO220F package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJM65R120
    • Package Name:

      TO220

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      30

    • RDS (on) @10V max (mΩ):

      120

    • QG @10V typ(nC):

      54

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R120 is a high voltage N-channel MOSFET in TO220 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJM65R120B
    • Package Name:

      TO263

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      30

    • RDS (on) @10V max (mΩ):

      120

    • QG @10V typ(nC):

      54

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R120B is a high voltage N-channel MOSFET in TO263 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJM65R120TL
    • Package Name:

      TOLL

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      23

    • RDS (on) @10V max (mΩ):

      120

    • QG @10V typ(nC):

      54

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R120TL is a high voltage N-channel MOSFET in TOLL package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJM65R120W
    • Package Name:

      TO247

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      30

    • RDS (on) @10V max (mΩ):

      120

    • QG @10V typ(nC):

      54

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R120W is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJM65R120X
    • Package Name:

      TO220F

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      30

    • RDS (on) @10V max (mΩ):

      120

    • QG @10V typ(nC):

      54

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R120X is a high voltage N-channel MOSFET in TO220F package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJM65R170
    • Package Name:

      TO220

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      23

    • RDS (on) @10V max (mΩ):

      170

    • QG @10V typ(nC):

      38

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R170 is a high voltage N-channel MOSFET in TO220 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJM65R170B
    • Package Name:

      TO263

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      23

    • RDS (on) @10V max (mΩ):

      170

    • QG @10V typ(nC):

      38

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R170B is a high voltage N-channel MOSFET in TO263 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJM65R170TL
    • Package Name:

      TOLL

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      21

    • RDS (on) @10V max (mΩ):

      170

    • QG @10V typ(nC):

      38

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R170TL is a high voltage N-channel MOSFET in TOLL package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJM65R170W
    • Package Name:

      TO247

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      23

    • RDS (on) @10V max (mΩ):

      170

    • QG @10V typ(nC):

      38

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R170W is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJM65R170X
    • Package Name:

      TO220F

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      23

    • RDS (on) @10V max (mΩ):

      170

    • QG @10V typ(nC):

      38

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R170X is a high voltage N-channel MOSFET in TO220F package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJM65R170Y
    • Package Name:

      IITO220

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      13

    • RDS (on) @10V max (mΩ):

      170

    • QG @10V typ(nC):

      38

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R170Y is a high voltage N-channel MOSFET in IITO220 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJM65R260
    • Package Name:

      TO220

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      17

    • RDS (on) @10V max (mΩ):

      260

    • QG @10V typ(nC):

      26

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R260 is a high voltage N-channel MOSFET in TO220 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJM65R260B
    • Package Name:

      TO263

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      14

    • RDS (on) @10V max (mΩ):

      260

    • QG @10V typ(nC):

      26

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R260B is a high voltage N-channel MOSFET in TO263 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)*Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

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