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高压MOSFET

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显示 51 个产品

  • Package Name
    • IITO220
    • TO220
    • TO220F
    • TO247
    • TO247-4L
    • TO251
    • TO252
    • TO263
    • TOLL
    重置筛选器
  • Product Status
    • New Product
    • Production
    重置筛选器
  • Features
    • with FRD
    重置筛选器
  • VDS(V)
    • 600
    • 650
    • 800
    重置筛选器
  • Vth typ(V)
    • 3
    • 3.5
    • 4
    重置筛选器
  • ID(A) @ 25℃
    • 7.3
    • 8
    • 10
    • 11
    • 12
    • 13
    • 14
    • 17
    • 21
    • 22
    • 23
    • 25
    • 30
    • 31
    • 32
    • 42
    • 50
    • 61
    • 67
    • 80
    重置筛选器
  • RDS (on) @10V max (mΩ)
    • 24
    • 28
    • 41
    • 44
    • 65
    • 70
    • 99
    • 120
    • 170
    • 200
    • 260
    • 360
    • 600
    重置筛选器
  • QG @10V typ(nC)
    • 12
    • 18
    • 26
    • 38
    • 52
    • 54
    • 57
    • 59
    • 70
    • 82
    • 122
    • 123
    • 132
    • 142
    重置筛选器
  • Operation Temperature(℃)
    • -55℃~150℃
    重置筛选器
  • Qualification
    • Industrial
    重置筛选器
  • Type Name
  • 比较
    显示全部
  • Package Name
    • IITO220
    • TO220
    • TO220F
    • TO247
    • TO247-4L
    • TO251
    • TO252
    • TO263
    • TOLL

    重置筛选器

  • Product Status
    • New Product
    • Production

    重置筛选器

  • Features
    • with FRD

    重置筛选器

  • VDS(V)
    • 600
    • 650
    • 800

    重置筛选器

  • Vth typ(V)
    • 3
    • 3.5
    • 4

    重置筛选器

  • ID(A) @ 25℃
    • 7.3
    • 8
    • 10
    • 11
    • 12
    • 13
    • 14
    • 17
    • 21
    • 22
    • 23
    • 25
    • 30
    • 31
    • 32
    • 42
    • 50
    • 61
    • 67
    • 80

    重置筛选器

  • RDS (on) @10V max (mΩ)
    • 24
    • 28
    • 41
    • 44
    • 65
    • 70
    • 99
    • 120
    • 170
    • 200
    • 260
    • 360
    • 600

    重置筛选器

  • QG @10V typ(nC)
    • 12
    • 18
    • 26
    • 38
    • 52
    • 54
    • 57
    • 59
    • 70
    • 82
    • 122
    • 123
    • 132
    • 142

    重置筛选器

  • Operation Temperature(℃)
    • -55℃~150℃

    重置筛选器

  • Qualification
    • Industrial

    重置筛选器

  • TO220

    Production

    650

    3.5

    12

    360

    18

    -55℃~150℃

    Industrial

  • TO263

    Production

    650

    3.5

    10

    360

    18

    -55℃~150℃

    Industrial

  • TO252

    Production

    650

    3.5

    11

    360

    18

    -55℃~150℃

    Industrial

  • TO220F

    Production

    650

    3.5

    12

    360

    18

    -55℃~150℃

    Industrial

  • TO220

    Production

    650

    3.5

    8

    600

    12

    -55℃~150℃

    Industrial

  • TO252

    Production

    650

    3.5

    7.3

    600

    12

    -55℃~150℃

    Industrial

  • TO251

    Production

    650

    3.5

    7.3

    600

    12

    -55℃~150℃

    Industrial

  • TO220F

    Production

    650

    3.5

    8

    600

    12

    -55℃~150℃

    Industrial

  • TO220

    Production

    800

    3.5

    22

    200

    52

    -55℃~150℃

    Industrial

  • TO263

    Production

    800

    3.5

    22

    200

    52

    -55℃~150℃

    Industrial

  • TO220F

    Production

    800

    3.5

    22

    200

    52

    -55℃~150℃

    Industrial

  • TO247

    Production

    with FRD

    600

    4

    80

    28

    142

    -55℃~150℃

    Industrial

  • TO247

    Production

    with FRD

    650

    4

    67

    44

    123

    -55℃~150℃

    Industrial

  • TO247

    Production

    with FRD

    650

    4

    80

    24

    142

    -55℃~150℃

    Industrial

  • TO220

    Production

    650

    3.5

    31

    99

    59

    -55℃~150℃

    Industrial

  • TO247

    Production

    with FRD

    650

    4

    50

    70

    70

    -55℃~150℃

    Industrial

  • TO263

    Production

    650

    3.5

    31

    99

    59

    -55℃~150℃

    Industrial

  • TO220

    New Product

    with FRD

    600

    4

    42

    65

    82

    -55℃~150℃

    Industrial

  • TO247

    Production

    650

    3.5

    31

    99

    59

    -55℃~150℃

    Industrial

  • TO263

    New Product

    with FRD

    600

    4

    42

    65

    82

    -55℃~150℃

    Industrial

  • WSJM65R360
    • Package Name:

      TO220

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      12

    • RDS (on) @10V max (mΩ):

      360

    • QG @10V typ(nC):

      18

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R360 is a high voltage N-channel MOSFET in TO220 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJM65R360B
    • Package Name:

      TO263

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      10

    • RDS (on) @10V max (mΩ):

      360

    • QG @10V typ(nC):

      18

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R360B is a high voltage N-channel MOSFET in TO263 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)*Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJM65R360S
    • Package Name:

      TO252

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      11

    • RDS (on) @10V max (mΩ):

      360

    • QG @10V typ(nC):

      18

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R360S is a high voltage N-channel MOSFET in TO252 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)*Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJM65R360X
    • Package Name:

      TO220F

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      12

    • RDS (on) @10V max (mΩ):

      360

    • QG @10V typ(nC):

      18

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R360X is a high voltage N-channel MOSFET in TO220F package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJM65R600
    • Package Name:

      TO220

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      8

    • RDS (on) @10V max (mΩ):

      600

    • QG @10V typ(nC):

      12

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R600 is a high voltage N-channel MOSFET in TO220 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJM65R600S
    • Package Name:

      TO252

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      7.3

    • RDS (on) @10V max (mΩ):

      600

    • QG @10V typ(nC):

      12

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R600S is a high voltage N-channel MOSFET in TO252 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJM65R600U
    • Package Name:

      TO251

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      7.3

    • RDS (on) @10V max (mΩ):

      600

    • QG @10V typ(nC):

      12

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R600U is a high voltage N-channel MOSFET in TO251 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJM65R600X
    • Package Name:

      TO220F

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      8

    • RDS (on) @10V max (mΩ):

      600

    • QG @10V typ(nC):

      12

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R600X is a high voltage N-channel MOSFET in TO220F package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJM80R200
    • Package Name:

      TO220

    • Product Status:

      Production

    • Features:

    • VDS(V):

      800

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      22

    • RDS (on) @10V max (mΩ):

      200

    • QG @10V typ(nC):

      52

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM80R200 is a high voltage N-channel MOSFET in TO220 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)*Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJM80R200B
    • Package Name:

      TO263

    • Product Status:

      Production

    • Features:

    • VDS(V):

      800

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      22

    • RDS (on) @10V max (mΩ):

      200

    • QG @10V typ(nC):

      52

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM80R200B is a high voltage N-channel MOSFET in TO263 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)*Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJM80R200X
    • Package Name:

      TO220F

    • Product Status:

      Production

    • Features:

    • VDS(V):

      800

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      22

    • RDS (on) @10V max (mΩ):

      200

    • QG @10V typ(nC):

      52

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM80R200X is a high voltage N-channel MOSFET in TO220F package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)*Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJT60R028DW
    • Package Name:

      TO247

    • Product Status:

      Production

    • Features:

      with FRD

    • VDS(V):

      600

    • Vth typ(V):

      4

    • ID(A) @ 25℃:

      80

    • RDS (on) @10V max (mΩ):

      28

    • QG @10V typ(nC):

      142

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJT60R028DW is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJM65R044DW
    • Package Name:

      TO247

    • Product Status:

      Production

    • Features:

      with FRD

    • VDS(V):

      650

    • Vth typ(V):

      4

    • ID(A) @ 25℃:

      67

    • RDS (on) @10V max (mΩ):

      44

    • QG @10V typ(nC):

      123

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJM65R044DW is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJT65R028DW
    • Package Name:

      TO247

    • Product Status:

      Production

    • Features:

      with FRD

    • VDS(V):

      650

    • Vth typ(V):

      4

    • ID(A) @ 25℃:

      80

    • RDS (on) @10V max (mΩ):

      24

    • QG @10V typ(nC):

      142

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJT65R028DW is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)*Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJ2T65R099D
    • Package Name:

      TO220

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      31

    • RDS (on) @10V max (mΩ):

      99

    • QG @10V typ(nC):

      59

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJ2T65R099D is a high voltage N-channel MOSFET in TO220 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJT65R075DW
    • Package Name:

      TO247

    • Product Status:

      Production

    • Features:

      with FRD

    • VDS(V):

      650

    • Vth typ(V):

      4

    • ID(A) @ 25℃:

      50

    • RDS (on) @10V max (mΩ):

      70

    • QG @10V typ(nC):

      70

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJT65R075DW is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on)*Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJ2T65R099DB
    • Package Name:

      TO263

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      31

    • RDS (on) @10V max (mΩ):

      99

    • QG @10V typ(nC):

      59

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJ2T65R099DB is a high voltage N-channel MOSFET in TO263 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJ2M60R065D
    • Package Name:

      TO220

    • Product Status:

      New Product

    • Features:

      with FRD

    • VDS(V):

      600

    • Vth typ(V):

      4

    • ID(A) @ 25℃:

      42

    • RDS (on) @10V max (mΩ):

      65

    • QG @10V typ(nC):

      82

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJ2M60R065D is a high voltage N-channel MOSFET in TO220 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

  • WSJ2T65R099DW
    • Package Name:

      TO247

    • Product Status:

      Production

    • Features:

    • VDS(V):

      650

    • Vth typ(V):

      3.5

    • ID(A) @ 25℃:

      31

    • RDS (on) @10V max (mΩ):

      99

    • QG @10V typ(nC):

      59

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJ2T65R099DW is a high voltage N-channel MOSFET in TO247 WSJ2T65R099DWQ package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density.

  • WSJ2M60R065DB
    • Package Name:

      TO263

    • Product Status:

      New Product

    • Features:

      with FRD

    • VDS(V):

      600

    • Vth typ(V):

      4

    • ID(A) @ 25℃:

      42

    • RDS (on) @10V max (mΩ):

      65

    • QG @10V typ(nC):

      82

    • Operation Temperature(℃):

      -55℃~150℃

    • Qualification:

      Industrial

    WSJ2M60R065DB is a high voltage N-channel MOSFET in TO263 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

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