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汽车级碳化硅MOSFETs

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显示 23 个产品

  • Package
    • TO247
    • TO247-4L
    • TO263-7L
    • TSPAK
    重置筛选器
  • Product Status
    • Active
    • New Product
    重置筛选器
  • Configuration
    • Single
    重置筛选器
  • VDS(V)
    • 1200
    • 1700
    重置筛选器
  • RDS(ON) @15Vgs (mΩ)
    • 20
    • 30
    • 40
    • 60
    • 75
    • 150
    • 1000
    重置筛选器
  • RDS(ON) @18Vgs (mΩ)
    • 16.3
    • 24
    • 33
    • 49
    • 58
    • 64
    • 65
    • 120
    • 750
    重置筛选器
  • Vth(typ)(V)
    • 2.2
    • 2.6
    • 3.2
    重置筛选器
  • ID(A)
    • 6
    • 6.3
    • 23.4
    • 24
    • 24.6
    • 29
    • 38
    • 42.6
    • 43
    • 48.1
    • 52.8
    • 53
    • 55
    • 61
    • 70
    • 76.5
    • 81
    • 93
    • 96.8
    • 128
    • 134
    • 139
    重置筛选器
  • Qg(nC)
    • 12
    • 26
    • 40
    • 52
    • 62
    • 63
    • 83
    • 115
    • 151
    • 215
    重置筛选器
  • Tj(max)(℃)
    • 175
    重置筛选器
  • Qualification
    • Automotive
    重置筛选器
  • Type Name
  • 比较
    显示全部
  • Package
    • TO247
    • TO247-4L
    • TO263-7L
    • TSPAK

    重置筛选器

  • Product Status
    • Active
    • New Product

    重置筛选器

  • Configuration
    • Single

    重置筛选器

  • VDS(V)
    • 1200
    • 1700

    重置筛选器

  • RDS(ON) @15Vgs (mΩ)
    • 20
    • 30
    • 40
    • 60
    • 75
    • 150
    • 1000

    重置筛选器

  • RDS(ON) @18Vgs (mΩ)
    • 16.3
    • 24
    • 33
    • 49
    • 58
    • 64
    • 65
    • 120
    • 750

    重置筛选器

  • Vth(typ)(V)
    • 2.2
    • 2.6
    • 3.2

    重置筛选器

  • ID(A)
    • 6
    • 6.3
    • 23.4
    • 24
    • 24.6
    • 29
    • 38
    • 42.6
    • 43
    • 48.1
    • 52.8
    • 53
    • 55
    • 61
    • 70
    • 76.5
    • 81
    • 93
    • 96.8
    • 128
    • 134
    • 139

    重置筛选器

  • Qg(nC)
    • 12
    • 26
    • 40
    • 52
    • 62
    • 63
    • 83
    • 115
    • 151
    • 215

    重置筛选器

  • Tj(max)(℃)
    • 175

    重置筛选器

  • Qualification
    • Automotive

    重置筛选器

  • TO247

    Active

    Single

    1200

    60

    49

    2.6

    48.1

    83

    175

    Automotive

  • TO247

    Active

    Single

    1200

    75

    58

    2.2

    38

    52

    175

    Automotive

  • TO263-7L

    New Product

    Single

    1200

    20

    16.3

    2.6

    128

    215

    175

    Automotive

  • TSPAK

    New Product

    Single

    1200

    20

    16.3

    2.6

    134

    215

    175

    Automotive

  • TO247-4L

    New Product

    Single

    1200

    20

    16.3

    2.6

    139

    215

    175

    Automotive

  • TSPAK

    New Product

    Single

    1200

    30

    24

    2.6

    96.8

    151

    175

    Automotive

  • TO263-7L

    New Product

    Single

    1200

    30

    24

    2.6

    93

    151

    175

    Automotive

  • TSPAK

    New Product

    Single

    1200

    40

    33

    2.6

    76.5

    115

    175

    Automotive

  • TO247-4L

    New Product

    Single

    1200

    30

    24

    2.6

    93

    151

    175

    Automotive

  • TSPAK

    New Product

    Single

    1200

    60

    49

    2.6

    52.8

    83

    175

    Automotive

  • TO263-7L

    New Product

    Single

    1200

    40

    33

    2.6

    70

    115

    175

    Automotive

  • TSPAK

    New Product

    Single

    1200

    75

    65

    2.2

    42.6

    62

    175

    Automotive

  • TO247-4L

    New Product

    Single

    1200

    40

    33

    2.6

    81

    115

    175

    Automotive

  • TSPAK

    New Product

    Single

    1200

    150

    120

    2.6

    24.6

    40

    175

    Automotive

  • TO263-7L

    New Product

    Single

    1200

    60

    49

    2.6

    53

    83

    175

    Automotive

  • TO247-4L

    New Product

    Single

    1200

    60

    49

    2.6

    61

    83

    175

    Automotive

  • TO263-7L

    New Product

    Single

    1200

    75

    64

    2.6

    43

    63

    175

    Automotive

  • TO247

    Active

    Single

    1700

    1000

    750

    3.2

    6.3

    12

    175

    Automotive

  • TO247-4L

    New Product

    Single

    1200

    75

    64

    2.6

    55

    62

    175

    Automotive

  • TO263-7L

    Active

    Single

    1700

    1000

    750

    3.2

    6

    12

    175

    Automotive

  • WNSC2M60120W-A
    • Package:

      TO247

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      60

    • RDS(ON) @18Vgs (mΩ):

      49

    • Vth(typ)(V):

      2.6

    • ID(A):

      48.1

    • Qg(nC):

      83

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO247 plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M75120W-A
    • Package:

      TO247

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      75

    • RDS(ON) @18Vgs (mΩ):

      58

    • Vth(typ)(V):

      2.2

    • ID(A):

      38

    • Qg(nC):

      52

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO247 plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M20120B7-A
    • Package:

      TO263-7L

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      20

    • RDS(ON) @18Vgs (mΩ):

      16.3

    • Vth(typ)(V):

      2.6

    • ID(A):

      128

    • Qg(nC):

      215

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M20120TB-A
    • Package:

      TSPAK

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      20

    • RDS(ON) @18Vgs (mΩ):

      16.3

    • Vth(typ)(V):

      2.6

    • ID(A):

      134

    • Qg(nC):

      215

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TSPAK plastic package with top side cooling structure, designed for high frequency, high efficiency systems.

  • WNSC2M20120R-A
    • Package:

      TO247-4L

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      20

    • RDS(ON) @18Vgs (mΩ):

      16.3

    • Vth(typ)(V):

      2.6

    • ID(A):

      139

    • Qg(nC):

      215

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M30120TB-A
    • Package:

      TSPAK

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      30

    • RDS(ON) @18Vgs (mΩ):

      24

    • Vth(typ)(V):

      2.6

    • ID(A):

      96.8

    • Qg(nC):

      151

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TSPAK plastic package with top side cooling structure, designed for high frequency, high efficiency systems.

  • WNSC2M30120B7-A
    • Package:

      TO263-7L

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      30

    • RDS(ON) @18Vgs (mΩ):

      24

    • Vth(typ)(V):

      2.6

    • ID(A):

      93

    • Qg(nC):

      151

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M40120TB-A
    • Package:

      TSPAK

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      40

    • RDS(ON) @18Vgs (mΩ):

      33

    • Vth(typ)(V):

      2.6

    • ID(A):

      76.5

    • Qg(nC):

      115

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TSPAK plastic package with top side cooling structure, designed for high frequency, high efficiency systems.

  • WNSC2M30120R-A
    • Package:

      TO247-4L

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      30

    • RDS(ON) @18Vgs (mΩ):

      24

    • Vth(typ)(V):

      2.6

    • ID(A):

      93

    • Qg(nC):

      151

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M60120TB-A
    • Package:

      TSPAK

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      60

    • RDS(ON) @18Vgs (mΩ):

      49

    • Vth(typ)(V):

      2.6

    • ID(A):

      52.8

    • Qg(nC):

      83

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TSPAK plastic package with top side cooling structure, designed for high frequency, high efficiency systems.

  • WNSC2M40120B7-A
    • Package:

      TO263-7L

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      40

    • RDS(ON) @18Vgs (mΩ):

      33

    • Vth(typ)(V):

      2.6

    • ID(A):

      70

    • Qg(nC):

      115

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M75120TB-A
    • Package:

      TSPAK

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      75

    • RDS(ON) @18Vgs (mΩ):

      65

    • Vth(typ)(V):

      2.2

    • ID(A):

      42.6

    • Qg(nC):

      62

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TSPAK plastic package with top side cooling structure, designed for high frequency, high efficiency systems.

  • WNSC2M40120R-A
    • Package:

      TO247-4L

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      40

    • RDS(ON) @18Vgs (mΩ):

      33

    • Vth(typ)(V):

      2.6

    • ID(A):

      81

    • Qg(nC):

      115

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M150120TB-A
    • Package:

      TSPAK

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      150

    • RDS(ON) @18Vgs (mΩ):

      120

    • Vth(typ)(V):

      2.6

    • ID(A):

      24.6

    • Qg(nC):

      40

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TSPAK plastic package with top side cooling structure, designed for high frequency, high efficiency systems.

  • WNSC2M60120B7-A
    • Package:

      TO263-7L

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      60

    • RDS(ON) @18Vgs (mΩ):

      49

    • Vth(typ)(V):

      2.6

    • ID(A):

      53

    • Qg(nC):

      83

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M60120R-A
    • Package:

      TO247-4L

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      60

    • RDS(ON) @18Vgs (mΩ):

      49

    • Vth(typ)(V):

      2.6

    • ID(A):

      61

    • Qg(nC):

      83

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M75120B7-A
    • Package:

      TO263-7L

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      75

    • RDS(ON) @18Vgs (mΩ):

      64

    • Vth(typ)(V):

      2.6

    • ID(A):

      43

    • Qg(nC):

      63

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M1K0170W-A
    • Package:

      TO247

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1700

    • RDS(ON) @15Vgs (mΩ):

      1000

    • RDS(ON) @18Vgs (mΩ):

      750

    • Vth(typ)(V):

      3.2

    • ID(A):

      6.3

    • Qg(nC):

      12

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M75120R-A
    • Package:

      TO247-4L

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON) @15Vgs (mΩ):

      75

    • RDS(ON) @18Vgs (mΩ):

      64

    • Vth(typ)(V):

      2.6

    • ID(A):

      55

    • Qg(nC):

      62

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M1K0170B7-A
    • Package:

      TO263-7L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1700

    • RDS(ON) @15Vgs (mΩ):

      1000

    • RDS(ON) @18Vgs (mΩ):

      750

    • Vth(typ)(V):

      3.2

    • ID(A):

      6

    • Qg(nC):

      12

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

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