New WeEn G3 SJ MOSFET Empowers High-Density AI PSU Designs

AI server power supplies are racing toward higher power density under OCP ORV3, 80 PLUS Titanium & Ruby standards. 

Yet designers keep hitting tough pain‑points on LLC resonant topologies: hard‑commutation failure caused by poor body‑diode recovery, bulky through‑hole packages limiting 1U airflow, plus excessive parasitic inductance triggering Miller oscillation. 

WeEn is glad to introduce our new‑generation G3 Super‑Junction MOSFET WSJ3M65R045DTL(650V, 45mΩ max / 36mΩ typ.), purpose‑built for high‑density AI PSUs:  

• TOLL SMD package with Kelvin‑source pin: cuts footprint by 60%, reduces parasitic inductance down to ~1.5 nH, supports full SMT automated assembly for 1U systems 

• Integrated ultrafast FRD(body diode): ultra‑low Qrr of 1.3 μC, eliminates LLC hard‑commutation failure risk  

• Leading‑class Rsp 9.7 mΩ·mm² & low Eoss 13 μJ @400V, extends ZVS operating range and improves light‑load efficiency  

• Robust thermal & avalanche performance, helping power supplies easily hit Titanium / Ruby efficiency targets 

This device is part of WeEn comprehensive G2/G3 SJ MOS portfolio covering 600‑650V, TOLL / TO‑247 / TO‑220 packages for AI server, telecom & industrial power supplies.