WeEn Semiconductors Showcases Super Junction MOSFETs for AI Server and Telecoms Power at PCIM 2025
News | 2025-04-23
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WeEn Semiconductors Showcases Super Junction MOSFETs for AI Server and Telecoms Power at PCIM 2025
Advanced, ultra-low-resistance 600 V MOSFETs for improved system efficiency, miniaturization and thermal management in high-performance server applications
April 23, 2025, Shanghai, China – WeEn Semiconductors, specialists in developing and manufacturing advanced bipolar power semiconductor products, will exhibit the company's latest 600 V super junction MOSFET for computing and telecoms server applications at this year's PCIM Expo conference and trade fair. The WSJ2M60R065DTL has been specifically developed to address the demands of artificial intelligence (AI) and other high-performance processing applications by enabling improved efficiency, smaller form factors and easier thermal management.
Based on the company's latest generation super junction technology, the WeEn WSJ2M60R065DTL super junction MOSFET combines an industry-leading on resistance (RDS(ON)) and figure of merit (RDS(ON)*Qg) with an ultra-compact TOLL package. Visitors to PCIM in Nuremberg from 6th – 8th May 2025 will have the opportunity to see this advanced technology on the WeEn booth (Hall 9, booth 131), alongside other bipolar products including silicon-controlled rectifiers, power diodes, high voltage transistors and silicon carbide (SiC) devices.
The WSJ2M60R065DTL is rated for 50 A, features a maximum RDS(ON) of 65 mΩ and has a typical blocking voltage of around 700 V. An integrated and fine-tuned forward recovery diode (FRD) ensures excellent reverse recovery robustness and balanced high-temperature performance. The body diode can withstand a commutation speed of 1000 A/μs without damage, making the WSJ2M60R065DTL particularly suitable for Zero Voltage Switching (ZVS) applications in soft-switching topologies where it can deliver high efficiency while handling irregular operating conditions. At the same time, stable resistance performance delivers a steady and predictable RDS(ON) across a range of current and temperature conditions.
In developing the new MOSFET, WeEn has focused on precise control of the charge balance of the super junction structure. This ensures robust avalanche ruggedness and low capacitive losses that allow for an optimized balance of RDS(ON) and EOSS As with all WeEn technologies, reliability is a prime consideration and the company conducts extensive and reliability checks. All of the company's super junction MOSFETs demonstrate not only consistency among samples but good ESD capabilities and zero aging during reliability examinations.
For more information, please explore WeEn Semiconductors' product portfolio here.
About WeEn Semiconductors
WeEn Semiconductors is a global joint venture company formed by NXP Semiconductors and Beijing JianGuang Asset Management Co. Ltd. (JAC Capital) in 2015. As a key player in the semiconductors industry, WeEn combines the advanced bipolar power technology and the strong resource of JAC Capital in Chinese manufacturing industry and distribution channels, to focus on developing a complete portfolio of industry-leading bipolar power products including silicon controlled rectifiers, power diodes, high voltage transistors, silicon carbide which are widely used in the automotive, telecommunications, computers and consumer electronics, intelligent home appliances, lighting, and power management markets. The aim is to help the customers achieve higher cost-efficiency and production efficiency and to contribute to the development of China and global intelligent manufacturing. Find out more at https://www.ween-semi.com/en.
Media Contact:
WeEn Semiconductors
Email: claudia@grandbridges.com
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