联系我们

EN

WNSC6D60650W

Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency, high efficiency systems.

样品申请
数据手册

Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency, high efficiency systems.

Parametric

  • Package

    TO247-2L

  • Product Status

    Active

  • Configuration

    Single

  • VRRM(max) (V)

    650

  • VF(typ) (V)

    1.26

  • Qr(nC)

    142

  • IF@VF(typ)(A)

    60

  • IFSM(max) (A)

    470

  • IR(μA)

    2

Related applications

Relevant documents

  • Documentation

名称

语言

日期

Sixth-generation high-frequency Schottky SiC diode_0

English

2025/04/19

SiC Modules for Industry

English

2025/04/19

高性能高可靠性 SiC MOSFET的关键设计与优化

Chinese

2025/04/19

WAN015 SiC MOSFET dynamic performance

Chinese

2025/04/19

Design and Optimization of Silicon Carbide Schottky Diode_2

English

2025/04/19

WAN012_120W PD Charger Reference Design

English

2025/04/19

您还在寻找其他东西吗？

Please fill in the following to download the information

  • I have read and agree to the WeEn SemiconductorsPrivacy Policy.
  • Submit