WG75N65MFR1

650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

650V IGBT uses advanced Fine Trench Field-stop IGBT technology which represents an optimum compromise between conduction and switching losses to minimize the power losses and maximum the power efficiency of power converter.

Parametric

  • Package

    TO247-4L

  • Technology

    Trench Field-stop

  • Build-in Diode

    Yes

  • Voltage class(V)

    650

  • Ic @100℃(A)

    75

  • PD @25℃(W)

    600

  • VGE(V)

    ±20

  • VGEth(V)

    4.8

  • VCE(sat)@25℃ Typ.(V)

    1.5

Product Order & Quality, Chemical content information

Type number 12NC Orderable part number Package Packing Product status RoHS / RHF Leadfree conversion date MSL (lead free) Chemical content RoHS
WG75N65MFR1 9340 740 55127 WG75N65MFR1Q TO247-4L HORIZONTAL, RAIL PACK Volume production RoHS compliant, Pb-Free lead plating, RHF H NA Chemical-WG75N65MFR1 WG75N65MFR1_RoHS

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