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碳化硅MOSFET

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显示 75 个产品

  • Package
    • TO247
    • TO247-4L
    • TO263-7L
    • TO3PF
    • TSPAK
    重置筛选器
  • Product Status
    • Active
    • New Product
    重置筛选器
  • Configuration
    • Single
    重置筛选器
  • VDS(V)
    • 650
    • 1200
    • 1400
    • 1700
    重置筛选器
  • RDS(ON)@15Vgs (mΩ)
    • -
    • 12
    • 15
    • 20
    • 25
    • 30
    • 33
    • 40
    • 43
    • 45
    • 55
    • 60
    • 75
    • 100
    • 150
    • 1000
    重置筛选器
  • RDS(ON)@18Vgs (mΩ)
    • 9.5
    • 9.8
    • 12
    • 16
    • 16.3
    • 20
    • 24
    • 26.5
    • 33
    • 34.5
    • 44
    • 49
    • 58
    • 60
    • 64
    • 65
    • 80
    • 91
    • 120
    • 160
    • 750
    重置筛选器
  • Vth(typ) (V)
    • 2.2
    • 2.6
    • 3.2
    • 3.5
    重置筛选器
  • ID(A)
    • 4.6
    • 6
    • 6.3
    • 7
    • 7.5
    • 23.4
    • 24
    • 24.6
    • 28.7
    • 29
    • 38
    • 41
    • 42
    • 42.6
    • 42.8
    • 43
    • 44
    • 45
    • 48
    • 48.1
    • 49
    • 50
    • 50.9
    • 52
    • 53
    • 53.9
    • 55
    • 58
    • 61
    • 61.1
    • 64
    • 68
    • 70
    • 70.4
    • 77
    • 81
    • 82
    • 84
    • 86.3
    • 91
    • 93
    • 97
    • 98
    • 101
    • 103
    • 104.2
    • 106.4
    • 128
    • 132
    • 134
    • 139
    • 151
    • 154
    • 154.4
    • 158.6
    • 165
    • 206
    • 210
    • 211
    • 216
    • 217
    • 218
    重置筛选器
  • Qg(nC)
    • 12
    • 26
    • 34
    • 35
    • 40
    • 43
    • 52
    • 59
    • 62
    • 63
    • 73
    • 83
    • 87
    • 115
    • 123
    • 151
    • 190
    • 191
    • 215
    • 256
    • 321
    重置筛选器
  • Tj(max)(℃)
    • 175
    重置筛选器
  • Qualification
    • Automotive
    • Industrial
    重置筛选器
  • Type Name
  • 比较
    显示全部
  • Package
    • TO247
    • TO247-4L
    • TO263-7L
    • TO3PF
    • TSPAK

    重置筛选器

  • Product Status
    • Active
    • New Product

    重置筛选器

  • Configuration
    • Single

    重置筛选器

  • VDS(V)
    • 650
    • 1200
    • 1400
    • 1700

    重置筛选器

  • RDS(ON)@15Vgs (mΩ)
    • -
    • 12
    • 15
    • 20
    • 25
    • 30
    • 33
    • 40
    • 43
    • 45
    • 55
    • 60
    • 75
    • 100
    • 150
    • 1000

    重置筛选器

  • RDS(ON)@18Vgs (mΩ)
    • 9.5
    • 9.8
    • 12
    • 16
    • 16.3
    • 20
    • 24
    • 26.5
    • 33
    • 34.5
    • 44
    • 49
    • 58
    • 60
    • 64
    • 65
    • 80
    • 91
    • 120
    • 160
    • 750

    重置筛选器

  • Vth(typ) (V)
    • 2.2
    • 2.6
    • 3.2
    • 3.5

    重置筛选器

  • ID(A)
    • 4.6
    • 6
    • 6.3
    • 7
    • 7.5
    • 23.4
    • 24
    • 24.6
    • 28.7
    • 29
    • 38
    • 41
    • 42
    • 42.6
    • 42.8
    • 43
    • 44
    • 45
    • 48
    • 48.1
    • 49
    • 50
    • 50.9
    • 52
    • 53
    • 53.9
    • 55
    • 58
    • 61
    • 61.1
    • 64
    • 68
    • 70
    • 70.4
    • 77
    • 81
    • 82
    • 84
    • 86.3
    • 91
    • 93
    • 97
    • 98
    • 101
    • 103
    • 104.2
    • 106.4
    • 128
    • 132
    • 134
    • 139
    • 151
    • 154
    • 154.4
    • 158.6
    • 165
    • 206
    • 210
    • 211
    • 216
    • 217
    • 218

    重置筛选器

  • Qg(nC)
    • 12
    • 26
    • 34
    • 35
    • 40
    • 43
    • 52
    • 59
    • 62
    • 63
    • 73
    • 83
    • 87
    • 115
    • 123
    • 151
    • 190
    • 191
    • 215
    • 256
    • 321

    重置筛选器

  • Tj(max)(℃)
    • 175

    重置筛选器

  • Qualification
    • Automotive
    • Industrial

    重置筛选器

  • TO247-4L

    Active

    Single

    1200

    12

    9.8

    2.6

    216

    321

    175

    Industrial

  • TO247-4L

    New Product

    Single

    650

    75

    60

    2.6

    48

    43

    175

    Industrial

  • TO247-4L

    Active

    Single

    1200

    30

    24

    2.6

    106.4

    151

    175

    Industrial

  • TO247

    New Product

    Single

    650

    75

    60

    2.6

    52

    43

    175

    Industrial

  • TO263-7L

    Active

    Single

    1200

    20

    16.3

    2.6

    154.4

    215

    175

    Industrial

  • TO263-7L

    New Product

    Single

    650

    100

    80

    2.6

    44

    34

    175

    Industrial

  • TO263-7L

    Active

    Single

    1200

    40

    33

    2.6

    86.3

    115

    175

    Industrial

  • TO247-4L

    New Product

    Single

    650

    100

    80

    2.6

    41

    34

    175

    Industrial

  • TO247-4L

    Active

    Single

    1200

    75

    58

    2.6

    53.9

    62

    175

    Industrial

  • TO247

    New Product

    Single

    650

    100

    80

    2.6

    44

    34

    175

    Industrial

  • TO247-4L

    Active

    Single

    1200

    150

    120

    2.6

    29

    40

    175

    Industrial

  • TO263-7L

    New Product

    Single

    1200

    20

    16.3

    2.6

    128

    215

    175

    Automotive

  • TO247-4L

    Active

    Single

    1200

    60

    49

    2.6

    61.1

    83

    175

    Industrial

  • TO247-4L

    New Product

    Single

    1200

    20

    16.3

    2.6

    139

    215

    175

    Automotive

  • TO263-7L

    Active

    Single

    1200

    60

    49

    2.6

    58

    83

    175

    Industrial

  • TO263-7L

    New Product

    Single

    1200

    30

    24

    2.6

    93

    151

    175

    Automotive

  • TO263-7L

    Active

    Single

    1200

    30

    24

    2.6

    104.2

    151

    175

    Industrial

  • TO247-4L

    New Product

    Single

    1200

    30

    24

    2.6

    93

    151

    175

    Automotive

  • TO247

    Active

    Single

    1200

    75

    58

    2.6

    42.8

    52

    175

    Industrial

  • TO263-7L

    New Product

    Single

    1200

    40

    33

    2.6

    70

    115

    175

    Automotive

  • WNSC2M12120R
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON)@15Vgs (mΩ):

      12

    • RDS(ON)@18Vgs (mΩ):

      9.8

    • Vth(typ) (V):

      2.6

    • ID(A):

      216

    • Qg(nC):

      321

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M70065R
    • Package:

      TO247-4L

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      75

    • RDS(ON)@18Vgs (mΩ):

      60

    • Vth(typ) (V):

      2.6

    • ID(A):

      48

    • Qg(nC):

      43

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    WeEn Gen-2 Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high effciency systems.

  • WNSC2M30120R
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON)@15Vgs (mΩ):

      30

    • RDS(ON)@18Vgs (mΩ):

      24

    • Vth(typ) (V):

      2.6

    • ID(A):

      106.4

    • Qg(nC):

      151

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M70065W
    • Package:

      TO247

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      75

    • RDS(ON)@18Vgs (mΩ):

      60

    • Vth(typ) (V):

      2.6

    • ID(A):

      52

    • Qg(nC):

      43

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    WeEn Gen-2 Silicon Carbide MOSFET in a TO247 plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M20120B7
    • Package:

      TO263-7L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16.3

    • Vth(typ) (V):

      2.6

    • ID(A):

      154.4

    • Qg(nC):

      215

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M100065B7
    • Package:

      TO263-7L

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      100

    • RDS(ON)@18Vgs (mΩ):

      80

    • Vth(typ) (V):

      2.6

    • ID(A):

      44

    • Qg(nC):

      34

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    WeEn Gen-2 Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high effciency systems.

  • WNSC2M40120B7
    • Package:

      TO263-7L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON)@15Vgs (mΩ):

      40

    • RDS(ON)@18Vgs (mΩ):

      33

    • Vth(typ) (V):

      2.6

    • ID(A):

      86.3

    • Qg(nC):

      115

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M100065R
    • Package:

      TO247-4L

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      100

    • RDS(ON)@18Vgs (mΩ):

      80

    • Vth(typ) (V):

      2.6

    • ID(A):

      41

    • Qg(nC):

      34

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    WeEn Gen-2 Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high effciency systems.

  • WNSC2M75120R
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON)@15Vgs (mΩ):

      75

    • RDS(ON)@18Vgs (mΩ):

      58

    • Vth(typ) (V):

      2.6

    • ID(A):

      53.9

    • Qg(nC):

      62

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M100065W
    • Package:

      TO247

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      650

    • RDS(ON)@15Vgs (mΩ):

      100

    • RDS(ON)@18Vgs (mΩ):

      80

    • Vth(typ) (V):

      2.6

    • ID(A):

      44

    • Qg(nC):

      34

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    WeEn Gen-2 Silicon Carbide MOSFET in a TO247 plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M150120R
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON)@15Vgs (mΩ):

      150

    • RDS(ON)@18Vgs (mΩ):

      120

    • Vth(typ) (V):

      2.6

    • ID(A):

      29

    • Qg(nC):

      40

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M20120B7-A
    • Package:

      TO263-7L

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16.3

    • Vth(typ) (V):

      2.6

    • ID(A):

      128

    • Qg(nC):

      215

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M60120R
    • Package:

      TO247-4L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON)@15Vgs (mΩ):

      60

    • RDS(ON)@18Vgs (mΩ):

      49

    • Vth(typ) (V):

      2.6

    • ID(A):

      61.1

    • Qg(nC):

      83

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M20120R-A
    • Package:

      TO247-4L

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON)@15Vgs (mΩ):

      20

    • RDS(ON)@18Vgs (mΩ):

      16.3

    • Vth(typ) (V):

      2.6

    • ID(A):

      139

    • Qg(nC):

      215

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M60120B7
    • Package:

      TO263-7L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON)@15Vgs (mΩ):

      60

    • RDS(ON)@18Vgs (mΩ):

      49

    • Vth(typ) (V):

      2.6

    • ID(A):

      58

    • Qg(nC):

      83

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M30120B7-A
    • Package:

      TO263-7L

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON)@15Vgs (mΩ):

      30

    • RDS(ON)@18Vgs (mΩ):

      24

    • Vth(typ) (V):

      2.6

    • ID(A):

      93

    • Qg(nC):

      151

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M30120B7
    • Package:

      TO263-7L

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON)@15Vgs (mΩ):

      30

    • RDS(ON)@18Vgs (mΩ):

      24

    • Vth(typ) (V):

      2.6

    • ID(A):

      104.2

    • Qg(nC):

      151

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M30120R-A
    • Package:

      TO247-4L

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON)@15Vgs (mΩ):

      30

    • RDS(ON)@18Vgs (mΩ):

      24

    • Vth(typ) (V):

      2.6

    • ID(A):

      93

    • Qg(nC):

      151

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M75120W
    • Package:

      TO247

    • Product Status:

      Active

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON)@15Vgs (mΩ):

      75

    • RDS(ON)@18Vgs (mΩ):

      58

    • Vth(typ) (V):

      2.6

    • ID(A):

      42.8

    • Qg(nC):

      52

    • Tj(max)(℃):

      175

    • Qualification:

      Industrial

    Silicon Carbide MOSFET in a TO247 plastic package, designed for high frequency, high efficiency systems.

  • WNSC2M40120B7-A
    • Package:

      TO263-7L

    • Product Status:

      New Product

    • Configuration:

      Single

    • VDS(V):

      1200

    • RDS(ON)@15Vgs (mΩ):

      40

    • RDS(ON)@18Vgs (mΩ):

      33

    • Vth(typ) (V):

      2.6

    • ID(A):

      70

    • Qg(nC):

      115

    • Tj(max)(℃):

      175

    • Qualification:

      Automotive

    Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

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