Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency switching mode power supplies.

Planar passivated high commutation three quadrant triac in a TO263 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series CT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required

WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Solder pin type. Integrated with NTC temperature sensor.

WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Solder pin type. Integrated with NTC temperature sensor.

WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Solder pin type. Integrated with NTC temperature sensor.

WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Pressfit type. Integrated with NTC temperature sensor.

WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Pressfit type. Integrated with NTC temperature sensor.

WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Pressfit type. Integrated with NTC temperature sensor.

Planar passivated Silicon Controlled Rectifier (SCR) in a IITO220 plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (T_j(max) = 150 °C)

Planar passivated Silicon Controlled Rectifier (SCR) in a TO247 surface mountable plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (T_j(max) = 150 °C)