Planar passivated sensitive gate four quadrant triac in a SOT223 surface-mountable plastic package. This sensitive gate triac is intended for interfacing with low power drivers including microcontrollers.

Planar passivated sensitive gate four quadrant triac in a SOT223 surface-mountable plastic package intended for applications requiring direct interfacing to logic level ICs and low power gate drivers.

Planar passivated very sensitive gate four quadrant triac in a SOT223 (SC-73) surface-mountable plastic package intended for applications requiring direct interfacing to logic level ICs and low power gate drivers

Planar passivated sensitive gate four quadrant triac in a TO92 plastic package intended for use in applications requiring direct interfacing to logic ICs and low power gate drivers.

Planar passivated very sensitive gate four quadrant triac in a TO92 plastic package intended for use in applications requiring direct interfacing to logic ICs and low power gate drivers.

Planar passivated high commutation three quadrant triac in a TO3PF plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required

Planar passivated Silicon Controlled Rectifier (SCR) module in TO-240AA for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.

Planar passivated Silicon Controlled Rectifier (SCR) module in TO-240AA for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.

Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)

Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.