Planar passivated high commutation three quadrant triac in a IITO3P package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (T_j(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency switched-mode power supplies

Silicon Carbide Schottky diode (Bare Die).

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Hyperfast power diode in a TO220F-2L plastic package

Hyperfast power diode in a TO247-2L plastic package

Hyperfast power diode in a TO263 plastic package

Hyperfast power diode in a TO220-2L plastic package

Planar passivated Silicon Controlled Rectifier in a TO247 plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance

Ultrafast power diode in a SMC package

Planar passivated Silicon Controlled Rectifier (SCR) in a TO263 (D2PAK) surface mountable plastic package intended for use in applications applications requiring good bidirectional blocking voltage and high surge current capability and high junction temperature capability (T_j(max) = 150 °C)