Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency switched-mode power supplies.

High speed IGBT with anti-parallel diode in TO247 package.

Silicon Carbide MOSFET (Bare Die).

Please contact us.

Silicon Carbide MOSFET (Bare Die).

Please contact us.

Silicon Carbide MOSFET (Bare Die).

Please contact us.

Silicon Carbide MOSFET (Bare Die).

Please contact us.

Silicon Carbide MOSFET (Bare Die).

Please contact us.

WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Integrated NTC temperature sensor, configured with Pressfit pin and pre-applied thermal paste.

WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Integrated NTC temperature sensor, configured with Pressfit pin and pre-applied thermal paste.

Planar passivated Silicon Controlled Rectifier (SCR) in a TO220 plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C).