Silicon Carbide MOSFET (Bare Die).
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- Low on-resistance
- Fast switching speed
- 0V turn-off gate voltage for simple gate drive
- Easy to parallel
- Controllable dV/dt for optimized EMI
- Reduced cooling requirements
- RoHS compliant
| Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| WBxx020SCM140CGAN | VDS | drain-source voltage | 25 °C ≤ Tj ≤ 175 °C | 1400 | V | ||
| ID | drain current | VGS = 18 V; Tmb = 25 °C | 106.4 | A | |||
| Ptot | total power dissipation | Tmb = 25 °C; Tj = 175 °C; assumes die package in TO-247 package with Rth(j-c) < 0.23 K/W | 652 | W | |||
| Tj | junction temperature | -55 | 175 | °C | |||
| RDS(on) | drain-source on-state resistance | VGS = 15 V; ID = 40 A; Tj = 25 °C | 30 | mΩ | |||
| QG(tot) | total gate charge | ID = 40 A; VDS = 800 V; VGS = 0 V/18 V; Tj = 25 °C | 151 | nC | |||
| QGD | gate-drain charge | 21 | nC | ||||
| Qr | recovered charge | ISD = 40 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C | 129 | nC |
Chemical Content -WBxx030SCM140CGAN
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