WNSCM80120R

Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

Features and Benefits
  • Separate driver source pin
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate drive
  • 100% UIS Tested
  • Easy to parallel
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
Applications
  • Switch Mode Power Supplies
  • UPS
  • Solar string inverter and solar optimizer
  • EV Charger
  • Motor Drives
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSCM80120R VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1200 V
ID  drain current  VGS = 20 V; Tmb = 25 °C     45 A
Ptot  total power dissipation  Tmb = 25 °C     270 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 20 V; ID = 20 A; Tj = 25 °C   80 98
QG(tot)  total gate charge  ID = 20 A; VDS = 800 V; VGS = 0V/20 V; Tj = 25 °C   59   nC
QGD  gate-drain charge   11   nC
Qr  recovered charge  ISD = 20 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   108   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSCM80120R

TO247-4L

HORIZONTAL, RAIL PACKVolume productionStandard MarkingWNSCM80120R6Q9340 733 21127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSCM80120R9340 733 21127WNSCM80120R6QNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSCM80120RWNSCM80120R6QWNSCM80120RLeaded  Dalways Pb-free

Chemical Content - WNSCM80120R

 

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