WNSCM80120R

Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

Features and Benefits
  • Separate driver source pin
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate drive
  • 100% UIS Tested
  • Easy to parallel
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
Applications
  • Switch Mode Power Supplies
  • UPS
  • Solar string inverter and solar optimizer
  • EV Charger
  • Motor Drives
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSCM80120R VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1200 V
ID  drain current  VGS = 20 V; Tmb = 25 °C     45 A
Ptot  total power dissipation  Tmb = 25 °C     270 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 20 V; ID = 20 A; Tj = 25 °C   80 98
QG(tot)  total gate charge  ID = 20 A; VDS = 800 V; VGS = 0V/20 V; Tj = 25 °C   59   nC
QGD  gate-drain charge   11   nC
Qr  recovered charge  ISD = 20 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   108   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSCM80120R

TO247-4L

HORIZONTAL, RAIL PACK Volume production Standard Marking WNSCM80120RQ 9340 728 10127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSCM80120R 9340 728 10127 WNSCM80120RQ NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSCM80120R WNSCM80120RQ WNSCM80120R Leaded  D always Pb-free    

Chemical Content - WNSCM80120R

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.