WeEn Gen-2 Silicon Carbide MOSFET in a TO247 plastic package, designed for high frequency, high efficiency systems.
- Low specific on-resistance
- Optimized dynamic performance
- Robust gate design
- 0V turn-off VGS for simple gate driving
- 100% UIS Tested
- Easy to parallel
- RoHS compliant
- PC/server/telecom power supplies
- UPS & Energy storage system
- Battery formation instrument
- PV MPPT and inverters
- EV Charger
- Motor Drives
| Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
| WNSC2M43065W | VDS | drain-source voltage | 25 °C ≤ Tj ≤ 175 °C | 650 | V | ||
| ID | drain current | VGS = 18 V; Tmb = 25 °C | 81 | A | |||
| Ptot | total power dissipation | Tmb = 25 °C; Tj = 175 °C | 326 | W | |||
| Tj | junction temperature | -55 | 175 | °C | |||
| RDS(on) | drain-source on-state resistance | VGS = 15 V; ID = 25 A; Tj = 25 °C | 43 | mΩ | |||
| VGS = 18 V; ID = 25 A; Tj = 25 °C | 34.5 | 45 | mΩ | ||||
| QG(tot) | total gate charge | ID = 25 A; VDS = 400 V; VGS = -4 V/18 V; Tj = 25 °C | 73 | nC | |||
| QGD | gate-drain charge | 8.6 | nC | ||||
| Qr | recovered charge | ISD = 25 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C | 77.4 | nC |
Chemical Content - WNSC2M43065W
Disclaimer
All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
