Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series CT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj = 150 °C) without the aid of a snubber. it is used where "high junction operating temperature capability" is required.

Features and Benefits
  • 3Q technology for improved noise immunity
  • High commutation capability with maximum false trigger immunity
  • High immunity to false turn-on by dV/dt
  • High junction operating temperature capability
  • High voltage capability
  • Isolated mounting base package
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in three quadrants only
  • Applications subject to high temperature
  • Electronic thermostats (heating and cooling)
  • Motor controls for home appliances
  • Rectifier-fed DC inductive loads e.g. DC motors and solenoids
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA206X-800CT VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Th ≤ 114 °C     6 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     60 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     66 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C 4   35 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C 4   35 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C 4   35 mA
IH holding current VD = 12 V; Tj = 25 °C     35 mA
VT on-state voltage IT = 7 A   1.3 1.6 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 10     A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A; dVcom/dt = 10 V/µs; gate open circuit 12     A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A; dVcom/dt = 1 V/µs; gate open circuit 20     A/ms
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
BTA206X-800CT TO220.jpg
Horizontal, Rail Pack Volume production Standard Marking BTA206X-800CT:127 9340 656 52127
BTA206X-800CT/L01 BTA206X-800CT/L01, 9340 665 31127
BTA206X-800CT/L02 BTA206X-800CT/L02Q 9340 680 35127
BTA206X-800CT/L03 BTA206X-800CT/L03Q 9340 685 26127
BTA206X-800CT/DG BTA206X-800CT/DGQ 9340 721 69127
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
BTA206X-800CT 9340 656 52127 BTA206X-800CT,127 NA NA  
BTA206X-800CT/L01 9340 665 31127 BTA206X-800CT/L01,
BTA206X-800CT/L02 9340 680 35127 BTA206X-800CT/L02Q
BTA206X-800CT/L03 9340 685 26127 BTA206X-800CT/L03Q
BTA206X-800CT/DG 9340 721 69127 BTA206X-800CT/DGQ

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
BTA206X-800CT BTA206X-800CT:127   BTA206X-800CT Leaded E   NA NA
BTA206X-800CT/L01, BTA206X-800CT/L01 Leaded E
BTA206X-800CT/L02Q BTA206X-800CT/L02 Leaded E
BTA206X-800CT/L03Q BTA206X-800CT/L03 Leaded E
BTA206X-800CT/DG BTA206X-800CT/DGQ BTA206X-800CT/DG Leaded H

Chemical Content - BTA206X-800CT

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