BTA206X-800CT

Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series CT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj = 150 °C) without the aid of a snubber. it is used where "high junction operating temperature capability" is required.

Features and Benefits
  • 3Q technology for improved noise immunity
  • High commutation capability with maximum false trigger immunity
  • High immunity to false turn-on by dV/dt
  • High junction operating temperature capability
  • High voltage capability
  • Isolated mounting base package
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in three quadrants only
Applications
  • Applications subject to high temperature
  • Electronic thermostats (heating and cooling)
  • Motor controls for home appliances
  • Rectifier-fed DC inductive loads e.g. DC motors and solenoids
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA206X-800CT VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Th ≤ 114 °C     6 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     60 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     66 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C 4   35 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C 4   35 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C 4   35 mA
IH holding current VD = 12 V; Tj = 25 °C     35 mA
VT on-state voltage IT = 7 A   1.3 1.6 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 10     A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A; dVcom/dt = 10 V/µs; gate open circuit 12     A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A; dVcom/dt = 1 V/µs; gate open circuit 20     A/ms
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
BTA206X-800CT TO220.jpg
TO220F
Horizontal, Rail Pack Volume production Standard Marking BTA206X-800CT:127 9340 656 52127
BTA206X-800CT/L01 BTA206X-800CT/L01, 9340 665 31127
BTA206X-800CT/L02 BTA206X-800CT/L02Q 9340 680 35127
BTA206X-800CT/L03 BTA206X-800CT/L03Q 9340 685 26127
BTA206X-800CT/DG BTA206X-800CT/DGQ 9340 721 69127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
BTA206X-800CT 9340 656 52127 BTA206X-800CT,127 NA NA  
BTA206X-800CT/L01 9340 665 31127 BTA206X-800CT/L01,
BTA206X-800CT/L02 9340 680 35127 BTA206X-800CT/L02Q
BTA206X-800CT/L03 9340 685 26127 BTA206X-800CT/L03Q
BTA206X-800CT/DG 9340 721 69127 BTA206X-800CT/DGQ

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
BTA206X-800CT BTA206X-800CT:127   BTA206X-800CT Leaded E   NA NA
BTA206X-800CT/L01, BTA206X-800CT/L01 Leaded E
BTA206X-800CT/L02Q BTA206X-800CT/L02 Leaded E
BTA206X-800CT/L03Q BTA206X-800CT/L03 Leaded E
BTA206X-800CT/DG BTA206X-800CT/DGQ BTA206X-800CT/DG Leaded H

Chemical Content - BTA206X-800CT

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

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