WNSC6D20650BT2-A

Silicon Carbide Schottky diode in a TO263-2L (D2PAK) plastic package, designed for high frequency switched-mode power supplies.

Features and Benefits
  • New 6th Generation Technology
  • Low Forward Voltage Drop
  • Low Reverse Leakage Current
  • High Forward Surge Capability IFSM
  • Reduced Losses in Associated MOSFET
  • Reduced EMI
  • Reduced Cooling Requirements
  • RoHS Compliant
  • AEC-Q101 qualified
Applications
  • Power factor correction
  • Telecom / Server SMPS
  • UPS
  • PV inverter
  • PC Silverbox
  • LED / OLED TV
  • Motor Drives
  • On board charger

 

Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC6D20650BT2-A VRRM  repetitive peak reverse voltage       650 V
IF(AV)  average forward current  δ = 0.5; square-wave pulse; Tmb ≤ 133 °C     20 A
Tj  junction temperature   -55   175 °C
VF  forward voltage  IF = 20 A; Tj = 25 °C   1.26 1.4 V
Qr  reverse charge  IF = 20 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C   48   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC6D20650BT2-A

TO263-2L

STANDARD MARK SMD Volume production Standard Marking WNSC6D20650BT2-A6J 9340 729 94118
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC6D20650BT2-A 9340 729 94118 WNSC6D20650BT2-A6J NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC6D20650BT2-A WNSC6D20650BT2-A6J WNSC6D20650BT2-A Leaded  H     1

Disclaimer

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