WNSC2M20120R

Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

Features and Benefits
  • Separate driver source pin
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate drive
  • 100% UIS Tested
  • Easy to parallel
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
Applications
  • Switch Mode Power Supplies
  • UPS
  • Solar string inverter and solar optimizer
  • EV Charger
  • Motor Drives
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC2M20120R VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1200 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     158.6 A
Ptot  total power dissipation  Tmb = 25 °C     833 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 50 A; Tj = 25 °C   20  
QG(tot)  total gate charge  ID = 50 A; VDS = 800 V; VGS = -4 V/18 V; Tj = 25 °C   215   nC
QGD  gate-drain charge   32   nC
Qr  recovered charge  ISD = 50 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   276   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC2M20120R

TO247-4L

HORIZONTAL, RAIL PACK Volume production Standard Marking WNSC2M20120R6Q 9340 733 72127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2M20120R 9340 733 72127 WNSC2M20120R6Q NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2M20120R WNSC2M20120R6Q WNSC2M20120R Leaded  D Always Pb-free    

Chemical Content - WNSC2M20120R

 

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