Silicon Carbide MOSFET in a 3-lead TO3PF plastic package, designed for high frequency, high efficiency systems.

Features and Benefits
  • Optimized for fly-back topologies
  • 15V/0V gate-source voltage compatible with fly-back controllers
  • 100% UIS Tested
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • Enlarge creepage distance
  • RoHS compliant
  • Auxiliary Power Supplies
  • Switch Mode Power Supplies
  • Solar Inverter
  • Frequency converter
  • Industrial power supply
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ Max Unit
WNSC2M1K0170J VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1700 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     4.6 A
Ptot  total power dissipation  Tmb = 25 °C     34 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 1 A; Tj = 25 °C   1000  
QG(tot)  total gate charge  ID = 2 A; VDS = 1200 V; VGS = 0 V/18 V; Tj = 25 °C   12   nC
QGD  gate-drain charge   5   nC
Qr  recovered charge  ISD = 1 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   38   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


HORIZONTAL, RAIL PACKVolume productionStandard MarkingWNSC2M1K0170JQ9340 737 41127
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2M1K0170J9340 737 41127WNSC2M1K0170JQNANA

Please login or register before apply WeEn sample.

Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2M1K0170JWNSC2M1K0170JQWNSC2M1K0170JLeaded  H

Chemical Content - WNSC2M1K0170J



All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.