Silicon Carbide MOSFET in a TSPAK plastic package with top side cooling structure, designed for high frequency, high efficiency systems.
- Automotive Qualified (AEC-Q101)
- Reduced cooling requirements
- Low on-resistance
- Fast switching speed
- 0V turn-off gate voltage for simple gate driver
- 100% UIS Tested • Easy to parallel
- Controllable dV/dt for optimized EMI
- RoHS compliant
- Automotive on board chargers
- Automotive DC-DC converters
- Automotive electric compressor motor drives
- HV battery management systems
| Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
| WNSC2M150120TB-A | VDS | drain-source voltage | 25 °C ≤ Tj ≤ 175 °C | 1200 | V | ||
| ID | drain current | VGS = 18 V; Tmb = 25 °C | 24.6 | A | |||
| Ptot | total power dissipation | Tmb = 25 °C; Tj = 175 °C | 169 | W | |||
| Tj | junction temperature | -55 | 175 | °C | |||
| RDS(on) | drain-source on-state resistance | VGS = 15 V; ID = 10 A; Tj = 25 °C | 150 | mΩ | |||
| VGS = 18 V; ID = 10 A; Tj = 25 °C | 120 | 150 | mΩ | ||||
| QG(tot) | total gate charge | ID = 10 A; VDS = 800 V; VGS = -4 V/18 V; Tj = 25 °C | 40 | nC | |||
| QGD | gate-drain charge | 9.8 | nC | ||||
| Qr | recovered charge | ISD = 10 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C | 26 | nC |
Chemical Content - WNSC2M150120TB-A
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